Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer

Dalam era teknologi terkini, sistem yang mempunyai berkeupayaan tinggi dan reka bentuk yang rumit memberi kesulitan kepada pereka bentuk. Keupayaan untuk mensimulasi reka bentuk komplek sebelum diberikan kepada pelanggan telah bertukar menjadi asas kepada pencapaian projek. Berdasarkan kepada pandan...

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Main Author: Balamahesn, Poongan
Format: Thesis
Language:English
Published: Universiti Sains Malaysia 2017
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Online Access:http://eprints.usm.my/35993/1/BALAMAHESN_POONGAN_CORRELATION_METHODOLOGY_BETWEEN_SILICON_AND_HSPICE_SIMULATION_OF_AC_IO_BUFFER_2017_MSc_E%26E_BSB_24.pdf
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spelling my.usm.eprints.35993 http://eprints.usm.my/35993/ Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer Balamahesn, Poongan QC170-197 Atomic physics Constitution and properties of matter Including molecular physics, relativity, quantum theory, and solid state physics TK Electrical Engineering. Electronics. Nuclear Engineering Dalam era teknologi terkini, sistem yang mempunyai berkeupayaan tinggi dan reka bentuk yang rumit memberi kesulitan kepada pereka bentuk. Keupayaan untuk mensimulasi reka bentuk komplek sebelum diberikan kepada pelanggan telah bertukar menjadi asas kepada pencapaian projek. Berdasarkan kepada pandangan pengilang, pemberian model HSPICE sangat berisiko kerana harta intelek (IP) penimbal IO yang sulit mungkin tersebar kepada orang luar. Pihak industri kebiasaannya mengedarkan model IBIS yang mengandungi teknik tingkah laku bagi memaparkan penimbal IO daripada model HSPICE tersebut. Maka, korelasi antara model HSPICE dan silikon menjadi penting bagi memberi lebih keyakinan dan meningkatkan kebolehpercayaan dan ketepatan model IBIS yang akan diedarkan kepada pelanggan. Dengan itu, kajian ini dijalankan untuk mencadangkan model korelasi bagi penimbal AC IO di antara simulasi HSPICE dan silikon secara cekap dan sifar kesilapan. Di dalam kerja penyelidikan ini, penimbal AC IO diuji berdasarkan masa menaik dan masa menurun bagi isyarat keluarannya. Dengan melaksanakan model korelasi ini, kebolehpercayaan model IBIS dari segi pemasaannya dapat memastikan keserasian dengan silikon secara berkesan. Bagi penyelidikan ini, hasilnya, proses sudut pantas dan tipikal memenuhi sasaran korelasi yang ditetapkan pada ± 20%, manakala proses sudut perlahan telah gagal memenuhi sasaran. In this technology era, the high-performance systems that include complexity on the design make noteworthy difficulties to board designers. The capacity to simulate the complex design before laying out the board has turned into a basic consideration for the accomplishment of a project. Based on manufacturer’s viewpoint, releasing a HSPICE model is a high risk, since the confidentiality of IO Buffer intellectual property (IP) might be exposed to outsiders. Industries usually distribute the IBIS model in which behavioral technique for displaying IO buffers is obtained from the HSPICE model. Therefore, correlation between the HSPICE model and silicon become significant to increase the reliability and accuracy of IBIS model which would be released to the customer. Hence, this research was carried forward to initiate correlation model for correlation of the HSPICE and silicon of AC IO buffer, in an efficient and error free manner. AC IO buffer is one of the important features needed to ensure reliability of IBIS model before handing over to the customer. In this work, AC IO buffer is tested on the rising time and falling time of output signal from the IO buffer. By implementing this correlation model, the timing of the IBIS model could ensure compatibility with silicon effectively. As a result, the fast and typical process corners meet the correlation target which was set within ±20%, but slow process corner was not meeting the target. Universiti Sains Malaysia 2017-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/35993/1/BALAMAHESN_POONGAN_CORRELATION_METHODOLOGY_BETWEEN_SILICON_AND_HSPICE_SIMULATION_OF_AC_IO_BUFFER_2017_MSc_E%26E_BSB_24.pdf Balamahesn, Poongan (2017) Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC170-197 Atomic physics Constitution and properties of matter Including molecular physics, relativity, quantum theory, and solid state physics
TK Electrical Engineering. Electronics. Nuclear Engineering
spellingShingle QC170-197 Atomic physics Constitution and properties of matter Including molecular physics, relativity, quantum theory, and solid state physics
TK Electrical Engineering. Electronics. Nuclear Engineering
Balamahesn, Poongan
Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer
description Dalam era teknologi terkini, sistem yang mempunyai berkeupayaan tinggi dan reka bentuk yang rumit memberi kesulitan kepada pereka bentuk. Keupayaan untuk mensimulasi reka bentuk komplek sebelum diberikan kepada pelanggan telah bertukar menjadi asas kepada pencapaian projek. Berdasarkan kepada pandangan pengilang, pemberian model HSPICE sangat berisiko kerana harta intelek (IP) penimbal IO yang sulit mungkin tersebar kepada orang luar. Pihak industri kebiasaannya mengedarkan model IBIS yang mengandungi teknik tingkah laku bagi memaparkan penimbal IO daripada model HSPICE tersebut. Maka, korelasi antara model HSPICE dan silikon menjadi penting bagi memberi lebih keyakinan dan meningkatkan kebolehpercayaan dan ketepatan model IBIS yang akan diedarkan kepada pelanggan. Dengan itu, kajian ini dijalankan untuk mencadangkan model korelasi bagi penimbal AC IO di antara simulasi HSPICE dan silikon secara cekap dan sifar kesilapan. Di dalam kerja penyelidikan ini, penimbal AC IO diuji berdasarkan masa menaik dan masa menurun bagi isyarat keluarannya. Dengan melaksanakan model korelasi ini, kebolehpercayaan model IBIS dari segi pemasaannya dapat memastikan keserasian dengan silikon secara berkesan. Bagi penyelidikan ini, hasilnya, proses sudut pantas dan tipikal memenuhi sasaran korelasi yang ditetapkan pada ± 20%, manakala proses sudut perlahan telah gagal memenuhi sasaran. In this technology era, the high-performance systems that include complexity on the design make noteworthy difficulties to board designers. The capacity to simulate the complex design before laying out the board has turned into a basic consideration for the accomplishment of a project. Based on manufacturer’s viewpoint, releasing a HSPICE model is a high risk, since the confidentiality of IO Buffer intellectual property (IP) might be exposed to outsiders. Industries usually distribute the IBIS model in which behavioral technique for displaying IO buffers is obtained from the HSPICE model. Therefore, correlation between the HSPICE model and silicon become significant to increase the reliability and accuracy of IBIS model which would be released to the customer. Hence, this research was carried forward to initiate correlation model for correlation of the HSPICE and silicon of AC IO buffer, in an efficient and error free manner. AC IO buffer is one of the important features needed to ensure reliability of IBIS model before handing over to the customer. In this work, AC IO buffer is tested on the rising time and falling time of output signal from the IO buffer. By implementing this correlation model, the timing of the IBIS model could ensure compatibility with silicon effectively. As a result, the fast and typical process corners meet the correlation target which was set within ±20%, but slow process corner was not meeting the target.
format Thesis
author Balamahesn, Poongan
author_facet Balamahesn, Poongan
author_sort Balamahesn, Poongan
title Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer
title_short Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer
title_full Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer
title_fullStr Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer
title_full_unstemmed Correlation Methodology between Silicon and HSPICE Simulation of AC IO Buffer
title_sort correlation methodology between silicon and hspice simulation of ac io buffer
publisher Universiti Sains Malaysia
publishDate 2017
url http://eprints.usm.my/35993/1/BALAMAHESN_POONGAN_CORRELATION_METHODOLOGY_BETWEEN_SILICON_AND_HSPICE_SIMULATION_OF_AC_IO_BUFFER_2017_MSc_E%26E_BSB_24.pdf
http://eprints.usm.my/35993/
_version_ 1643708654800601088
score 13.160551