Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
Kajian ini menunjukkan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat gallium arsenida (GaAs) berliang melalui kaedah percikan frekuensi radio dan penyejat alur elektron. Sebagai perbandingan, penumbuhan secara terus ke atas substrat GaAs dan lapisan penampan nitrida seperti aluminum nitr...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2016
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| Online Access: | http://eprints.usm.my/31850/1/MUHAMAD_IKRAM_BIN_MD_TAIB_24%28NN%29.pdf http://eprints.usm.my/31850/ |
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