Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].
Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi, Device simulations for the electrical, optical and thermal characteristics of GaN...
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| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Online Access: | http://eprints.usm.my/10397/1/DESIGN_AND_PERFORMANCE_OF_LASER.pdf http://eprints.usm.my/10397/ |
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| Summary: | Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi,
Device simulations for the electrical, optical and thermal characteristics of GaN-based laser diodes (LDs) have been investigated. It is difficult to obtain pcladding layers with sufficient thickness of high Al composition and high acceptor concentration,
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