Structural and thermal diffusivity studies of polycrystalline (CuSe)1-xSex metal chalcogenide compound

This paper reports the preparation and the characterization of the (CuSe)1−xSex metal chalcogenide semiconductor compounds with different stoichiometric compositions of Se (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) in bulk form. The (CuSe)1−xSex compounds were prepared using the solid state reaction by v...

Full description

Saved in:
Bibliographic Details
Main Authors: Liew, Josephine Ying Chyi, Talib, Zainal Abidin, Mat Yunus, Wan Mahmood, Zainal, Zulkarnain, Abd. Moksin, Mohd Maarof, Lim, Kean Pah, Wan Yusoff, Wan Mohamad Daud
Format: Conference or Workshop Item
Language:English
Published: American Institute of Physics 2006
Online Access:http://psasir.upm.edu.my/id/eprint/57285/1/Structural%20and%20thermal%20diffusivity%20studies%20of%20polycrystalline%20%28CuSe%291%E2%88%92xSex%20metal%20chalcogenide%20compound.pdf
http://psasir.upm.edu.my/id/eprint/57285/
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reports the preparation and the characterization of the (CuSe)1−xSex metal chalcogenide semiconductor compounds with different stoichiometric compositions of Se (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) in bulk form. The (CuSe)1−xSex compounds were prepared using the solid state reaction by varying the ratio of CuSe:Se in the reaction mixture. X‐ray powder diffraction analysis is used to identify and measure the mass absorption coefficient of the (CuSe)1−xSex compounds to support the thermal diffusivity behaviour. The thermal diffusivity of the polycrystalline (CuSe)1−xSex compounds were measured and analyzed for the first time, using the photoflash technique. The thermal diffusivity values were determined to be in the range of 2.524 × 10−3 cm 2 /s to 1.125 × 10−2 cm 2 /s. It was found that the thermal diffusivity value tends to decrease as the parameter x increases. The relationship between the thermal diffusivity, mass absorption coefficient and density of the (CuSe)1−xSex are discussed in detail.