Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon
Porous silicon samples were formed on p-type silicon wafer by electrochemical method. Metal porous silicon structure was used to obtain the rectifying behavior. Current density and etching time was studied which affect the photoluminescence and energy band gap. Three different groups were prepared u...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/47366/1/Effect%20of%20current%20density%20and%20etching%20time%20on%20photoluminescence%20and%20energy%20band%20gap%20of%20p-type%20porous%20silicon.pdf http://psasir.upm.edu.my/id/eprint/47366/ http://link.springer.com/article/10.1007%2Fs11082-016-0476-3 |
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