MOCVD-grown indium phosphide nanowires for optoelectronics

• Main Authors: Paiman, Suriati, Gao, Qiang, Joyce, Hannah, Tan, Hark Hoe, Jagadish, Chennupati, Kim, Yong, Guo, Yanan, Kuranananda, Pemasiri, Mohammad, Montazeri, Howard, Jackson, Leigh, Smith
• Format: Article
• Language: English
• Published: Trans Tech Publications 2014
• Online Access: http://psasir.upm.edu.my/id/eprint/34538/1/MOCVD-grown%20indium%20phosphide%20nanowires%20for%20optoelectronics.pdf; http://psasir.upm.edu.my/id/eprint/34538/; http://www.scientific.net/AMR.832.201

We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while zinc-blende (ZB) nanowires are favourable at lower growth temperatures and lower V/III ratios. Results also show that InP nanowires grow preferably in the WZ crystal structure than the ZB crystal structure with increasing V/III ratio or decreasing diameter. This causes a blue-shift in the bandgap as growth temperature increases. These results show that careful control of growth temperature, V/III ratio and catalyst size are crucial for obtaining InP nanowires of a specific crystal structure needed for device applications.