A method for depositing tin oxide film.

The present invention relates to a method for depositing tin oxide film on a substrate comprises of providing a substrate; preparing a precursor solution comprises of metal dichloride, hydrogen peroxide and a complexing agent; adjusting the precursor solution at a predetermined pH; maintaining the p...

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Main Authors: Wan Yunus, Wan Md. Zin, Ebrahimiasl, Saeideh, Kassim, Anuar, Zainal, Zulkarnain
Format: Patent
Language:English
Published: 2011
Online Access:http://psasir.upm.edu.my/id/eprint/32117/
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id my.upm.eprints.32117
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spelling my.upm.eprints.321172014-10-16T03:20:19Z http://psasir.upm.edu.my/id/eprint/32117/ A method for depositing tin oxide film. Wan Yunus, Wan Md. Zin Ebrahimiasl, Saeideh Kassim, Anuar Zainal, Zulkarnain The present invention relates to a method for depositing tin oxide film on a substrate comprises of providing a substrate; preparing a precursor solution comprises of metal dichloride, hydrogen peroxide and a complexing agent; adjusting the precursor solution at a predetermined pH; maintaining the precursor solution at a predetermined temperature; immersing; and drying the substrate. The tin oxide film is deposited on the substrate by chemical bath deposition at a room temperature. 2011-04-21 Patent NonPeerReviewed Wan Md. Zin Wan Yunus (2011) A method for depositing tin oxide film. PI2011001802. English
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description The present invention relates to a method for depositing tin oxide film on a substrate comprises of providing a substrate; preparing a precursor solution comprises of metal dichloride, hydrogen peroxide and a complexing agent; adjusting the precursor solution at a predetermined pH; maintaining the precursor solution at a predetermined temperature; immersing; and drying the substrate. The tin oxide film is deposited on the substrate by chemical bath deposition at a room temperature.
format Patent
author Wan Yunus, Wan Md. Zin
Ebrahimiasl, Saeideh
Kassim, Anuar
Zainal, Zulkarnain
spellingShingle Wan Yunus, Wan Md. Zin
Ebrahimiasl, Saeideh
Kassim, Anuar
Zainal, Zulkarnain
A method for depositing tin oxide film.
author_facet Wan Yunus, Wan Md. Zin
Ebrahimiasl, Saeideh
Kassim, Anuar
Zainal, Zulkarnain
author_sort Wan Yunus, Wan Md. Zin
title A method for depositing tin oxide film.
title_short A method for depositing tin oxide film.
title_full A method for depositing tin oxide film.
title_fullStr A method for depositing tin oxide film.
title_full_unstemmed A method for depositing tin oxide film.
title_sort method for depositing tin oxide film.
publishDate 2011
url http://psasir.upm.edu.my/id/eprint/32117/
_version_ 1643830515492454400
score 13.160551