Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films
CuInS2 thin films were deposited onto fluorine doped tin oxide coated glass (FTO) using pulse electrodeposition from aqueous solutions comprising Cu-EDTA, In2(SO4)3 and Na2S2O3. Deposited films were polycrystalline with tetragonal structure and behavior as a p-type semiconductor. A smooth and adhere...
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Malaysian Solid State Science and Technology Society
2010
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my.upm.eprints.163892016-01-19T02:48:54Z http://psasir.upm.edu.my/id/eprint/16389/ Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films Teo, Sook Liang Zainal, Zulkarnain Tan, Wee Tee Hussein, Mohd. Zobir CuInS2 thin films were deposited onto fluorine doped tin oxide coated glass (FTO) using pulse electrodeposition from aqueous solutions comprising Cu-EDTA, In2(SO4)3 and Na2S2O3. Deposited films were polycrystalline with tetragonal structure and behavior as a p-type semiconductor. A smooth and adherent film was obtained at pulse height of -1.00 V and the band gap energy was found to be 1.40 eV with indirect transition. The Cu:In:S compositions of the films was 1.1:1.0:1.8. From morphological studies, the particles had worm like structure which interconnected with each other. Solid phase voltammetry resulted in redox couple of Cu2+/Cu+ and Cu+/Cu0. Malaysian Solid State Science and Technology Society 2010 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/16389/1/Pulse%20electrodeposition%20and%20solid%20phase%20voltammetry%20of%20copper%20indium%20disulfide%20semiconductor%20thin%20films.pdf Teo, Sook Liang and Zainal, Zulkarnain and Tan, Wee Tee and Hussein, Mohd. Zobir (2010) Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films. Solid State Science and Technology, 18 (2). pp. 74-83. ISSN 0128-7389 |
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CuInS2 thin films were deposited onto fluorine doped tin oxide coated glass (FTO) using pulse electrodeposition from aqueous solutions comprising Cu-EDTA, In2(SO4)3 and Na2S2O3. Deposited films were polycrystalline with tetragonal structure and behavior as a p-type semiconductor. A smooth and adherent film was obtained at pulse height of -1.00 V and the band gap energy was found to be 1.40 eV with indirect transition. The Cu:In:S compositions of the films was 1.1:1.0:1.8. From morphological studies, the particles had worm like structure which interconnected with each other. Solid phase voltammetry resulted in redox couple of Cu2+/Cu+ and Cu+/Cu0. |
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Article |
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Teo, Sook Liang Zainal, Zulkarnain Tan, Wee Tee Hussein, Mohd. Zobir |
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Teo, Sook Liang Zainal, Zulkarnain Tan, Wee Tee Hussein, Mohd. Zobir Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
author_facet |
Teo, Sook Liang Zainal, Zulkarnain Tan, Wee Tee Hussein, Mohd. Zobir |
author_sort |
Teo, Sook Liang |
title |
Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
title_short |
Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
title_full |
Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
title_fullStr |
Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
title_full_unstemmed |
Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
title_sort |
pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films |
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Malaysian Solid State Science and Technology Society |
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2010 |
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http://psasir.upm.edu.my/id/eprint/16389/1/Pulse%20electrodeposition%20and%20solid%20phase%20voltammetry%20of%20copper%20indium%20disulfide%20semiconductor%20thin%20films.pdf http://psasir.upm.edu.my/id/eprint/16389/ |
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13.160551 |