Multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer
This paper describes the development work of enabling a multi beam laser grooving technology for 40nm node low-k/ULK semiconductor device. A Nd:YAG ultraviolet (UV) laser diode operating at a wavelength of 355 nm was used in the study. The effects of multi beam laser micromachining parameters, i.e....
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| Main Authors: | , , , , |
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2018
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| Online Access: | http://dspace.uniten.edu.my/jspui/handle/123456789/8776 |
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