Temperature dependence of leakage current in InAs avalanche photodiodes

• المؤلفون الرئيسيون: Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
• التنسيق: مقال
• اللغة: en_US
• منشور في: 2017

Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An aval...