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Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the signific...

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Main Authors: Herrnsdorf, J., McKendry, J.J.D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A.M., Henderson, R.K., Underwood, I., Watson, S., Kelly, A.E., Gu, E., Dawson, M.D.
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Language:en_US
Published: 2017
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spelling my.uniten.dspace-56652017-12-18T07:02:27Z Active-matrix GaN micro light-emitting diode display with unprecedented brightness Herrnsdorf, J. McKendry, J.J.D. Zhang, S. Xie, E. Ferreira, R. Massoubre, D. Zuhdi, A.M. Henderson, R.K. Underwood, I. Watson, S. Kelly, A.E. Gu, E. Dawson, M.D. Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2. © 1963-2012 IEEE. 2017-12-08T06:41:40Z 2017-12-08T06:41:40Z 2015 Article 10.1109/TED.2015.2416915 en_US IEEE Transactions on Electron Devices Volume 62, Issue 6, 1 June 2015, Article number 7084141, Pages 1918-1925
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2. © 1963-2012 IEEE.
format Article
author Herrnsdorf, J.
McKendry, J.J.D.
Zhang, S.
Xie, E.
Ferreira, R.
Massoubre, D.
Zuhdi, A.M.
Henderson, R.K.
Underwood, I.
Watson, S.
Kelly, A.E.
Gu, E.
Dawson, M.D.
spellingShingle Herrnsdorf, J.
McKendry, J.J.D.
Zhang, S.
Xie, E.
Ferreira, R.
Massoubre, D.
Zuhdi, A.M.
Henderson, R.K.
Underwood, I.
Watson, S.
Kelly, A.E.
Gu, E.
Dawson, M.D.
Active-matrix GaN micro light-emitting diode display with unprecedented brightness
author_facet Herrnsdorf, J.
McKendry, J.J.D.
Zhang, S.
Xie, E.
Ferreira, R.
Massoubre, D.
Zuhdi, A.M.
Henderson, R.K.
Underwood, I.
Watson, S.
Kelly, A.E.
Gu, E.
Dawson, M.D.
author_sort Herrnsdorf, J.
title Active-matrix GaN micro light-emitting diode display with unprecedented brightness
title_short Active-matrix GaN micro light-emitting diode display with unprecedented brightness
title_full Active-matrix GaN micro light-emitting diode display with unprecedented brightness
title_fullStr Active-matrix GaN micro light-emitting diode display with unprecedented brightness
title_full_unstemmed Active-matrix GaN micro light-emitting diode display with unprecedented brightness
title_sort active-matrix gan micro light-emitting diode display with unprecedented brightness
publishDate 2017
_version_ 1644493745854349312
score 13.214268

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