Robust optimization of a silicon lateral pin photodiode

The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the...

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Bibliographic Details
Main Authors: Kalthom Tasirin, S., Susthitha Menon, P., Ahmad, I., Fazlili Abdullah, S.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5227
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