Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf
Volume :0, Issue No :0, Article ID :978-1-5090-2888-7/16, Page Start :462, Page End :467, ISSN :978-1-5090-2888-7/16
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2017
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my.uniten.dspace-522018-12-10T06:38:21Z Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf Fazrena Azlee bte. Hamid, Dr. Khairul Anwar Syahmi Che Ismail Julius Teo Han Loong Memristor Physically Unclonable Function (RO-PUF) Volume :0, Issue No :0, Article ID :978-1-5090-2888-7/16, Page Start :462, Page End :467, ISSN :978-1-5090-2888-7/16 The memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name “memory resistor”. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bitaliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the ROPUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used. 2017-05-15T03:40:19Z 2017-05-15T03:40:19Z 2016-11 Conference Proceeding 10.1109/ICAEES.2016.7888086 en 2016 International Conference on Advances in Electrical, Electronic and System Engineering (ICAEESE 2016) |
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Memristor Physically Unclonable Function (RO-PUF) |
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Memristor Physically Unclonable Function (RO-PUF) Fazrena Azlee bte. Hamid, Dr. Khairul Anwar Syahmi Che Ismail Julius Teo Han Loong Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| description |
Volume :0, Issue No :0, Article ID :978-1-5090-2888-7/16, Page Start :462, Page End :467, ISSN :978-1-5090-2888-7/16 |
| format |
Conference Proceeding |
| author |
Fazrena Azlee bte. Hamid, Dr. Khairul Anwar Syahmi Che Ismail Julius Teo Han Loong |
| author_facet |
Fazrena Azlee bte. Hamid, Dr. Khairul Anwar Syahmi Che Ismail Julius Teo Han Loong |
| author_sort |
Fazrena Azlee bte. Hamid, Dr. |
| title |
Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| title_short |
Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| title_full |
Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| title_fullStr |
Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| title_full_unstemmed |
Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| title_sort |
effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| publishDate |
2017 |
| _version_ |
1644492144690331648 |
| score |
13.214268 |