Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS
The poly-Si/SiO2 based MOSFETs have been encountering a problem with the limitation of channel length for the device miniaturization. The drain induced barrier lowering (DIBL) effect is the main threat for the device to acquire excellent device's characteristics. Thus, the metal-gate/high-k tec...
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| Main Authors: | , , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5188 |
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