Analytical Modeling and Parameter Extraction of High-Performance Low-Power Memristive Device Based on Trilayer Interlinked Graphene Oxide

• Main Authors: Atiyah A.M., Sedghi H., Ahmadi M.T., Rahmani M.
• Other Authors: 59310016900
• Format: Article
• Published: World Scientific 2025
• Subjects: Associative storage; Compact disks; Ferroelectric RAM; Graphene devices; Islanding; Matrix algebra; Membrane technology; Negative temperature coefficient; Partial discharges; Percolation (computer storage); Percolation (solid state); Positive temperature coefficient; Redox reactions; Schottky barrier diodes; Solvent extraction; Surface discharges; System-on-chip; Tetrodes; Graphene nanoribbons; High resistance; High resistance switching; Low resistance; Low resistance switching; Memristor; Resistance switching; Schottky emissions; Trap assisted tunneling; Trilayer graphene nanoribbon; Trilayers; Current voltage characteristics

To overcome the scaling limitations of large-scale charge-storage-based memories, the physical-based analytic model of a memristor with high-performance resistive random-access memory and low power based on Trilayer interlinked graphene oxide (TIGO) with significant charge transport as an active lay...