Copper doping effect in the back surface field layer of CdTe thin film solar cells

• Main Authors: Ahmad N.I., Kiong T.S., Doroody C., Rahman K.S., Norizan M.N., Ahmad M.F., Kar Y.B., Harif M.N., Amin N.
• Other Authors: 57200991933
• Format: Article
• Published: Elsevier B.V. 2025
• Subjects: Cadmium sulfide; Capacitance; Carrier lifetime; Conversion efficiency; Copper; Copper compounds; Density functional theory; Electric network analysis; Energy gap; II-VI semiconductors; Ohmic contacts; Open circuit voltage; Semiconductor doping; Thermionic emission; Thin film solar cells; Thin films; Zinc compounds; Back surface field; Backsurface field; Cadmium telluride; Cell capacitance; Density-functional-theory; Energy; Solar cell capacitance simulator; Zinc telluride; Zinc tellurides

In this work, the Solar Cell Capacitance Simulator (SCAPS-1D) is employed to evaluate the characteristics of CdTe thin films with ZnTe as the Back Surface Field (BSF) layer and estimate the effective copper doping ratio at both the atomic scale and the device operational response perspective. The el...