Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application

Zinc sulfide (ZnS) is widely employed in a solar cell structure as a buffer layer due to its excellent physical and chemical properties. ZnS elements discovered in the earth's crust are safe. This study examined the performance characteristics of ZnS thin films deposited on soda lime glass subs...

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Main Authors: Arsad A.Z., Bahrudin M.S., Arzaee N.A., Rahman M.N.A., Chau C.F., Abdullah S.F., Zuhdi A.W.M.
Other Authors: 56926685200
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Published: Elsevier Ltd 2025
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spelling my.uniten.dspace-367332025-03-03T15:44:16Z Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application Arsad A.Z. Bahrudin M.S. Arzaee N.A. Rahman M.N.A. Chau C.F. Abdullah S.F. Zuhdi A.W.M. 56926685200 55603412800 57204034965 57102327000 25824209000 14319069500 56589966300 Annealing Buffer layers Deposition Energy gap Glass substrates II-VI semiconductors Lime Morphology Thin film solar cells Thin films Annealed films Annealing temperatures Chemical bath Chemical bath deposition methods CIGS solar cells Photovoltaic materials Physical and chemical properties Solar cell structures Solar-cell applications Zinc sulfide thin films Zinc sulfide Zinc sulfide (ZnS) is widely employed in a solar cell structure as a buffer layer due to its excellent physical and chemical properties. ZnS elements discovered in the earth's crust are safe. This study examined the performance characteristics of ZnS thin films deposited on soda lime glass substrate via chemical bath deposition. The ZnS thin films were annealed at temperatures of 300, 400, and 500 �C in a vacuum environment. XRD showed the ZnS thin films with high annealing temperatures are composed of a wurtzite structure. Increased annealing temperature improved crystallization, average crystallite sizes, film thickness, and low dislocation density as well as lattice strain. The FESEM analysis reveals that the morphology of annealed thin film at high temperatures has larger grains compared to the deposited films. EDS spectra confirm that zinc and sulfur are present in the ZnS thin film. Annealed films have an average transmission of 20?50 % in the visible spectrum of 300?1100 nm. Films exhibit 103 �cm resistivity, and the bulk carrier density ranges between 1012 and 1014 cm?3. The annealed film at 500 �C has a direct band gap of 3.47 eV, a resistivity of 1.79 ? 103 �cm, and a bulk concentration of 1.19 ? 1014 cm?3. All ZnS thin films have n-type conductivity. ? 2024 Elsevier Ltd and Techna Group S.r.l. Final 2025-03-03T07:44:16Z 2025-03-03T07:44:16Z 2024 Article 10.1016/j.ceramint.2024.01.082 2-s2.0-85181966390 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181966390&doi=10.1016%2fj.ceramint.2024.01.082&partnerID=40&md5=a0dfa40871caad6e4f87d73ca102eb68 https://irepository.uniten.edu.my/handle/123456789/36733 50 7 11776 11786 Elsevier Ltd Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic Annealing
Buffer layers
Deposition
Energy gap
Glass substrates
II-VI semiconductors
Lime
Morphology
Thin film solar cells
Thin films
Annealed films
Annealing temperatures
Chemical bath
Chemical bath deposition methods
CIGS solar cells
Photovoltaic materials
Physical and chemical properties
Solar cell structures
Solar-cell applications
Zinc sulfide thin films
Zinc sulfide
spellingShingle Annealing
Buffer layers
Deposition
Energy gap
Glass substrates
II-VI semiconductors
Lime
Morphology
Thin film solar cells
Thin films
Annealed films
Annealing temperatures
Chemical bath
Chemical bath deposition methods
CIGS solar cells
Photovoltaic materials
Physical and chemical properties
Solar cell structures
Solar-cell applications
Zinc sulfide thin films
Zinc sulfide
Arsad A.Z.
Bahrudin M.S.
Arzaee N.A.
Rahman M.N.A.
Chau C.F.
Abdullah S.F.
Zuhdi A.W.M.
Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application
description Zinc sulfide (ZnS) is widely employed in a solar cell structure as a buffer layer due to its excellent physical and chemical properties. ZnS elements discovered in the earth's crust are safe. This study examined the performance characteristics of ZnS thin films deposited on soda lime glass substrate via chemical bath deposition. The ZnS thin films were annealed at temperatures of 300, 400, and 500 �C in a vacuum environment. XRD showed the ZnS thin films with high annealing temperatures are composed of a wurtzite structure. Increased annealing temperature improved crystallization, average crystallite sizes, film thickness, and low dislocation density as well as lattice strain. The FESEM analysis reveals that the morphology of annealed thin film at high temperatures has larger grains compared to the deposited films. EDS spectra confirm that zinc and sulfur are present in the ZnS thin film. Annealed films have an average transmission of 20?50 % in the visible spectrum of 300?1100 nm. Films exhibit 103 �cm resistivity, and the bulk carrier density ranges between 1012 and 1014 cm?3. The annealed film at 500 �C has a direct band gap of 3.47 eV, a resistivity of 1.79 ? 103 �cm, and a bulk concentration of 1.19 ? 1014 cm?3. All ZnS thin films have n-type conductivity. ? 2024 Elsevier Ltd and Techna Group S.r.l.
author2 56926685200
author_facet 56926685200
Arsad A.Z.
Bahrudin M.S.
Arzaee N.A.
Rahman M.N.A.
Chau C.F.
Abdullah S.F.
Zuhdi A.W.M.
format Article
author Arsad A.Z.
Bahrudin M.S.
Arzaee N.A.
Rahman M.N.A.
Chau C.F.
Abdullah S.F.
Zuhdi A.W.M.
author_sort Arsad A.Z.
title Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application
title_short Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application
title_full Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application
title_fullStr Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application
title_full_unstemmed Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application
title_sort zinc sulfide thin films deposited by chemical bath: tuning consideration of structural, optical band gap, and electrical properties for cigs solar cells application
publisher Elsevier Ltd
publishDate 2025
_version_ 1825816117468200960
score 13.244413