A comprehensive modeling on MoS2 interface and defect engineering in CZTS thin film solar cells

• Main Authors: Islam M.S., Doroody C., Kiong T.S., abar F.I.Z., Bin Bahrudin M.S., Rahman K.S., Boon Kar Y., Zuhdi A.W.M.
• 其他作者: 57714001600
• 格式: Article
• 出版: Elsevier Editora Ltda 2025
• 主題: Behavioral research; Cell engineering; Error correction; Hard facing; Industrial research; Semiconductor doping; Silicon compounds; Temperature scales; Zinc sulfide; Comprehensive modeling; CZTS; CZTS thin films; Defect engineering; Energy; Interface engineering; Modeling; MoS 2; P-type; Thin-films; Layered semiconductors

This work -incorporates the SCAPS-1D modeling program toexamine the impacts of defects in the Molybdenum Disulfide (MoS2) layer and the MoS2 interface on the electrical performance of CZTS solar cells. To get an ideal energy gap (Eg) of 1.3 eV and a carrier concentration (CC) of 1014 cm??, the resea...