Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells
The influence of the Nd:YAG laser's oscillation energy on creating textured surfaces on silicon wafers is investigated in this study. The silicon wafer surfaces were directly ablated by a pulsed Nd:YAG laser beam to create the texturing, which was then examined using UV�Vis spectroscopy, AFM an...
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my.uniten.dspace-341632024-10-14T11:18:13Z Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells Huda Abdul Razak N. Amin N. Sajedur Rahman K. Pasupuleti J. Md. Akhtaruzzaman Sopian K. Albaqami M.D. Mohamed Tighezza A. Alothman Z.A. Sillanp�� M. 54397656800 7102424614 56348138800 11340187300 57214121369 7003375391 57217990301 6602759178 35085715800 7101751659 Crystalline silicon solar cells Efficiency Nd:YAG laser Reflectance Texturing The influence of the Nd:YAG laser's oscillation energy on creating textured surfaces on silicon wafers is investigated in this study. The silicon wafer surfaces were directly ablated by a pulsed Nd:YAG laser beam to create the texturing, which was then examined using UV�Vis spectroscopy, AFM and FESEM to determine its characteristics. The reflectance was reduced up to 15% after laser texturing of multicrystalline silicon wafers. The silicon surface suffers from structural defects and a laser damage layer as a result of the laser texturing process, which in turn has an effect on the lifespan of the photo-generated carriers. To compensate for the laser damage layer, the silicon surface was cleaned with diluted KOH (15%) to remove undesirable particles and the oxide layer. Surface roughness and reflectance in silicon solar cells were changed depending on the laser oscillation energy utilized for texturing. The roughness and reflectance were measured using AFM and UV�Vis, respectively. The laser oscillation energy of 84 J/p had the highest average roughness of 0.2104 m and the lowest reflectance of 5%. As a result, standard silicon solar cell devices revealed photovoltaic conversion efficiencies of roughly 7.5% and 5.0% for laser-textured grid and one-dimensional line patterns, respectively. � 2023 The Authors Final 2024-10-14T03:18:13Z 2024-10-14T03:18:13Z 2023 Article 10.1016/j.rinp.2023.106435 2-s2.0-85152519320 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85152519320&doi=10.1016%2fj.rinp.2023.106435&partnerID=40&md5=bb6c9f5d4ccdae87f313e23b4ba89fe8 https://irepository.uniten.edu.my/handle/123456789/34163 48 106435 All Open Access Gold Open Access Elsevier B.V. Scopus |
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Crystalline silicon solar cells Efficiency Nd:YAG laser Reflectance Texturing Huda Abdul Razak N. Amin N. Sajedur Rahman K. Pasupuleti J. Md. Akhtaruzzaman Sopian K. Albaqami M.D. Mohamed Tighezza A. Alothman Z.A. Sillanp�� M. Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
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The influence of the Nd:YAG laser's oscillation energy on creating textured surfaces on silicon wafers is investigated in this study. The silicon wafer surfaces were directly ablated by a pulsed Nd:YAG laser beam to create the texturing, which was then examined using UV�Vis spectroscopy, AFM and FESEM to determine its characteristics. The reflectance was reduced up to 15% after laser texturing of multicrystalline silicon wafers. The silicon surface suffers from structural defects and a laser damage layer as a result of the laser texturing process, which in turn has an effect on the lifespan of the photo-generated carriers. To compensate for the laser damage layer, the silicon surface was cleaned with diluted KOH (15%) to remove undesirable particles and the oxide layer. Surface roughness and reflectance in silicon solar cells were changed depending on the laser oscillation energy utilized for texturing. The roughness and reflectance were measured using AFM and UV�Vis, respectively. The laser oscillation energy of 84 J/p had the highest average roughness of 0.2104 m and the lowest reflectance of 5%. As a result, standard silicon solar cell devices revealed photovoltaic conversion efficiencies of roughly 7.5% and 5.0% for laser-textured grid and one-dimensional line patterns, respectively. � 2023 The Authors |
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54397656800 |
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54397656800 Huda Abdul Razak N. Amin N. Sajedur Rahman K. Pasupuleti J. Md. Akhtaruzzaman Sopian K. Albaqami M.D. Mohamed Tighezza A. Alothman Z.A. Sillanp�� M. |
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Article |
author |
Huda Abdul Razak N. Amin N. Sajedur Rahman K. Pasupuleti J. Md. Akhtaruzzaman Sopian K. Albaqami M.D. Mohamed Tighezza A. Alothman Z.A. Sillanp�� M. |
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Huda Abdul Razak N. |
title |
Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
title_short |
Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
title_full |
Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
title_fullStr |
Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
title_full_unstemmed |
Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
title_sort |
influence of pulsed nd:yag laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells |
publisher |
Elsevier B.V. |
publishDate |
2024 |
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1814061043942424576 |
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13.209306 |