Recent advances of In2O3-based thin-film transistors: A review

• Main Authors: Yap B.K., Zhang Z., Thien G.S.H., Chan K.-Y., Tan C.Y.
• Other Authors: 26649255900
• Format: Review
• Published: Elsevier B.V. 2024
• Subjects: Doping; Heterojunction; Homojunction; In₂O₃; Semiconductor; Thin-film transistors

The electronics industry has witnessed a surge in demand for semiconductor materials, prompting researchers to explore active semiconductors that can effectively meet the growing needs of this sector. Among these materials, indium oxide (In2O3) is a potential candidate for developing thin-film transistors (TFTs) in organic light-emitting diodes. This emergence is due to the favourable characteristics of In2O3, such as high carrier mobility, low processing temperature, strong electrical uniformity, transparency to visible light, and low cost. Currently, In2O3-based TFTs are fabricated with excellent properties, including electron mobility up to 400 cm2 / V s, subthreshold swing as low as 0.13 V/decade, on/off current ratio up to 108, a threshold voltage of approximately 1 to 3 V, and transparency up to 90% in the visible range. Hence, this review aims to provide an overview of the carrier transport mechanism of metal oxide semiconductor materials, specifically focusing on In2O3-based TFTs (amorphous and crystalline). Furthermore, this study discusses the structural properties of pure, doped, homojunction, heterojunction, and other In2O3-based TFTs before demonstrating the recent advancements in the field. Lastly, this review presents potential outcomes and future perspectives of In2O3-based TFTs in developing semiconductor technology. Based on this review, In2O3-based TFTs are effectively explored regarding their future integration into modern technologies. � 2023 The Author(s)