A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells

This study proposes an oxide solar cell in an n-p-p structure. This design uses a p-type delafossite CuFeO2 layer to absorb Sunlight, along with n-ZnO to transport electrons and p-NiO to transport holes. The SCAPS-1D modeling software was employed to conduct the relative study on the p-CuFeO2 absorb...

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Main Authors: Sarkar D.K., Mottakin M., Hasan A.K.M., Selvanathan V., Ariful Islam M., Shahiduzzaman M., Alharbi H.F., Akhtaruzzaman M.
Other Authors: 57220704093
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Published: Institute of Physics 2024
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spelling my.uniten.dspace-339622024-10-14T11:17:31Z A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells Sarkar D.K. Mottakin M. Hasan A.K.M. Selvanathan V. Ariful Islam M. Shahiduzzaman M. Alharbi H.F. Akhtaruzzaman M. 57220704093 57195305487 57200133780 57160057200 57361246600 55640096500 57188221000 57195441001 CuFeO<sub>2</sub> delafossite oxide oxide solar cell SCAPS-1D Conversion efficiency Defects II-VI semiconductors Iron compounds Nickel oxide Solar cells Zinc oxide Absorber layers Defect tolerance Delafossite oxides Delafossites Design use Oxide solar cell P-structures P-type SCAPS-1D Tolerance limits Copper compounds This study proposes an oxide solar cell in an n-p-p structure. This design uses a p-type delafossite CuFeO2 layer to absorb Sunlight, along with n-ZnO to transport electrons and p-NiO to transport holes. The SCAPS-1D modeling software was employed to conduct the relative study on the p-CuFeO2 absorber layer. The optimized thickness, bandgap, and bulk defects tolerance limit of the absorber layer are 700 nm, 1.3 eV, and 1014 cm?3, respectively. The charge carrier�s density in the absorber layer at 1018 cm?3 showed the highest performance. The defects tolerance limit of the interface n-ZnO/CuFeO2 is 1017 cm?3. After optimizing the device FTO/n-ZnO/CuFeO2/p-NiO/Au exhibited a maximum power conversion efficiency of 19.93%, corresponding V oc of 1.10 V, J sc of 24.95 mA cm?2, and FF of 85.5%. Additionally, this study demonstrates the prospect of CuFeO2 as the active layer in oxide-based solar cell technology. � 2023 The Japan Society of Applied Physics. Final 2024-10-14T03:17:31Z 2024-10-14T03:17:31Z 2023 Article 10.35848/1347-4065/acfa4b 2-s2.0-85176274630 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85176274630&doi=10.35848%2f1347-4065%2facfa4b&partnerID=40&md5=82024b1a01ee382b52595680c2d41ed6 https://irepository.uniten.edu.my/handle/123456789/33962 62 10 102004 Institute of Physics Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic CuFeO<sub>2</sub>
delafossite oxide
oxide solar cell
SCAPS-1D
Conversion efficiency
Defects
II-VI semiconductors
Iron compounds
Nickel oxide
Solar cells
Zinc oxide
Absorber layers
Defect tolerance
Delafossite oxides
Delafossites
Design use
Oxide solar cell
P-structures
P-type
SCAPS-1D
Tolerance limits
Copper compounds
spellingShingle CuFeO<sub>2</sub>
delafossite oxide
oxide solar cell
SCAPS-1D
Conversion efficiency
Defects
II-VI semiconductors
Iron compounds
Nickel oxide
Solar cells
Zinc oxide
Absorber layers
Defect tolerance
Delafossite oxides
Delafossites
Design use
Oxide solar cell
P-structures
P-type
SCAPS-1D
Tolerance limits
Copper compounds
Sarkar D.K.
Mottakin M.
Hasan A.K.M.
Selvanathan V.
Ariful Islam M.
Shahiduzzaman M.
Alharbi H.F.
Akhtaruzzaman M.
A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells
description This study proposes an oxide solar cell in an n-p-p structure. This design uses a p-type delafossite CuFeO2 layer to absorb Sunlight, along with n-ZnO to transport electrons and p-NiO to transport holes. The SCAPS-1D modeling software was employed to conduct the relative study on the p-CuFeO2 absorber layer. The optimized thickness, bandgap, and bulk defects tolerance limit of the absorber layer are 700 nm, 1.3 eV, and 1014 cm?3, respectively. The charge carrier�s density in the absorber layer at 1018 cm?3 showed the highest performance. The defects tolerance limit of the interface n-ZnO/CuFeO2 is 1017 cm?3. After optimizing the device FTO/n-ZnO/CuFeO2/p-NiO/Au exhibited a maximum power conversion efficiency of 19.93%, corresponding V oc of 1.10 V, J sc of 24.95 mA cm?2, and FF of 85.5%. Additionally, this study demonstrates the prospect of CuFeO2 as the active layer in oxide-based solar cell technology. � 2023 The Japan Society of Applied Physics.
author2 57220704093
author_facet 57220704093
Sarkar D.K.
Mottakin M.
Hasan A.K.M.
Selvanathan V.
Ariful Islam M.
Shahiduzzaman M.
Alharbi H.F.
Akhtaruzzaman M.
format Article
author Sarkar D.K.
Mottakin M.
Hasan A.K.M.
Selvanathan V.
Ariful Islam M.
Shahiduzzaman M.
Alharbi H.F.
Akhtaruzzaman M.
author_sort Sarkar D.K.
title A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells
title_short A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells
title_full A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells
title_fullStr A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells
title_full_unstemmed A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells
title_sort numerical study on delafossite cufeo2 as an absorber for efficient and sustainable oxide solar cells
publisher Institute of Physics
publishDate 2024
_version_ 1814061034772627456
score 13.214268