Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique

• 主要な著者: Sapeli M.M.I., Chelvanathan P., Hossain M.I., Sajedur Rahman K., Yusoff Y., Amin N.
• その他の著者: 57201282111
• フォーマット: 論文
• 出版事項: Elsevier B.V. 2024
• 主題: Co-sputtering; Cr doping; CZTS thin film; Intermediate band; Copper compounds; Defect states; Red Shift; Semiconductor doping; Solar cells; Sputtering; Thin films; Zinc compounds; Absorption characteristics; Co-sputtering techniques; Cosputtering; Cr-doped; Cr-doping; CZTS thin films; Intermediate bands; Intermediate-band solar cells; Photons absorption; Thin-films; Tin compounds

This study investigates the potential of a quaternary compound semiconductor to be realized as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work, the effects of Cr doping into Cu2ZnSnS4 (CZTS) host material to form intermediate band within the forbidden band...