Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride
The work function of indium tin oxide (ITO) was modified using caesium fluoride (CsF). Various concentrations of CsF was spin-coated on top of ITO and baked while the residual CsF was washed away with DI water. The work function of all the ITO samples was measured using ultraviolet photoelectron spe...
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my.uniten.dspace-299662023-12-29T15:43:47Z Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride Whitcher T.J. Yeoh K.H. Ng Y.B.C. Talik N.A. Chua C.L. Woon K.L. Chanlek N. Nakajima H. Saisopa T. Songsiriritthigul P. Oswald S. Yap B.K. 26641611700 55681242500 57215746121 55576358000 55681416600 12041961200 24775167600 36562269300 55931748600 6603434551 55245855200 26649255900 Atomic force microscopy Cesium Fluorine compounds Photoelectrons Surface roughness Tin Ultraviolet photoelectron spectroscopy X ray photoelectron spectroscopy Control device Hole-only device Indium tin oxide Orders of magnitude Oxygen concentrations Small concentration Vinylcarbazole Work function The work function of indium tin oxide (ITO) was modified using caesium fluoride (CsF). Various concentrations of CsF was spin-coated on top of ITO and baked while the residual CsF was washed away with DI water. The work function of all the ITO samples was measured using ultraviolet photoelectron spectroscopy and it was found that the work function of ITO reaches as high as 5.75 eV. The work function rapidly increases with small concentrations of CsF solution and then decreases for higher concentrations. Using atomic force microscopy and x-ray photoelectron spectroscopy, the cause was determined to be the change in surface roughness and the oxygen concentration, with the former having a much greater influence on the work function than the latter. The current density of ITO/poly(vinylcarbazole)/Al hole-only devices using the modified ITO increases by more than seven orders of magnitude compared with the control device. � 2013 IOP Publishing Ltd. Final 2023-12-29T07:43:47Z 2023-12-29T07:43:47Z 2013 Article 10.1088/0022-3727/46/47/475102 2-s2.0-84887829986 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887829986&doi=10.1088%2f0022-3727%2f46%2f47%2f475102&partnerID=40&md5=0d34e58e5b122a1c054ec54ca32147de https://irepository.uniten.edu.my/handle/123456789/29966 46 47 475102 Scopus |
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Atomic force microscopy Cesium Fluorine compounds Photoelectrons Surface roughness Tin Ultraviolet photoelectron spectroscopy X ray photoelectron spectroscopy Control device Hole-only device Indium tin oxide Orders of magnitude Oxygen concentrations Small concentration Vinylcarbazole Work function |
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Atomic force microscopy Cesium Fluorine compounds Photoelectrons Surface roughness Tin Ultraviolet photoelectron spectroscopy X ray photoelectron spectroscopy Control device Hole-only device Indium tin oxide Orders of magnitude Oxygen concentrations Small concentration Vinylcarbazole Work function Whitcher T.J. Yeoh K.H. Ng Y.B.C. Talik N.A. Chua C.L. Woon K.L. Chanlek N. Nakajima H. Saisopa T. Songsiriritthigul P. Oswald S. Yap B.K. Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
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The work function of indium tin oxide (ITO) was modified using caesium fluoride (CsF). Various concentrations of CsF was spin-coated on top of ITO and baked while the residual CsF was washed away with DI water. The work function of all the ITO samples was measured using ultraviolet photoelectron spectroscopy and it was found that the work function of ITO reaches as high as 5.75 eV. The work function rapidly increases with small concentrations of CsF solution and then decreases for higher concentrations. Using atomic force microscopy and x-ray photoelectron spectroscopy, the cause was determined to be the change in surface roughness and the oxygen concentration, with the former having a much greater influence on the work function than the latter. The current density of ITO/poly(vinylcarbazole)/Al hole-only devices using the modified ITO increases by more than seven orders of magnitude compared with the control device. � 2013 IOP Publishing Ltd. |
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26641611700 |
author_facet |
26641611700 Whitcher T.J. Yeoh K.H. Ng Y.B.C. Talik N.A. Chua C.L. Woon K.L. Chanlek N. Nakajima H. Saisopa T. Songsiriritthigul P. Oswald S. Yap B.K. |
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Article |
author |
Whitcher T.J. Yeoh K.H. Ng Y.B.C. Talik N.A. Chua C.L. Woon K.L. Chanlek N. Nakajima H. Saisopa T. Songsiriritthigul P. Oswald S. Yap B.K. |
author_sort |
Whitcher T.J. |
title |
Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
title_short |
Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
title_full |
Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
title_fullStr |
Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
title_full_unstemmed |
Enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
title_sort |
enhancement of the work function of indium tin oxide by surface modification using caesium fluoride |
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2023 |
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1806426470679052288 |
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13.219503 |