Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness
The main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd 1-xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value...
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my.uniten.dspace-294312023-12-28T12:13:02Z Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness Imamzai M. Aghaei M. Amin N. 55833049900 57216285233 7102424614 AMPS-1D Cd<sub>1-x</sub>Zn<sub>x</sub>Te solar cells Efficiency Thin film solar cells Tunable bandgap Cadmium alloys Carrier concentration Efficiency Energy gap Film thickness Photonics Thin films Zinc Absorber layers AMPS-1D Efficiency increase Minority carrier Numerical modeling and analysis Output parameters Thin film solar cells Tunable Band-gap Solar cells The main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd 1-xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value of x). In this research AMPS-1D has been used for simulation. The results of this study indicate that by decreasing the absorber layer's thickness, the efficiency decreases. In the baseline cases, the absorber layer's bandgap was changed from 1.45eV to 2.05eV, It was found out that by increasing the energy gap, efficiency increases but after 1.85ev the bandgap will be constant, hence Eg=1.88eV was considered for absorber to analyze the baseline cases. It was observed that by increasing the lifetime and carrier concentrations of absorber layer, the output parameters increase in the cells. However, the baseline cases structures are the same (SnO 2/CdS/CdZnTe/Back Contact) and the highest conversion efficiency of 25.505% is obtained by baseline case 2 (Jsc= 29.819 mA/cm 2, Voc = 1.28 Volt, FF= 0.731) which has higher doping and minority carriers lifetime. � 2013 IEEE. Final 2023-12-28T04:13:02Z 2023-12-28T04:13:02Z 2013 Conference paper 10.1109/ICP.2013.6687076 2-s2.0-84893543544 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84893543544&doi=10.1109%2fICP.2013.6687076&partnerID=40&md5=43528827c16d5af24044118defb6c817 https://irepository.uniten.edu.my/handle/123456789/29431 6687076 87 89 Scopus |
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AMPS-1D Cd<sub>1-x</sub>Zn<sub>x</sub>Te solar cells Efficiency Thin film solar cells Tunable bandgap Cadmium alloys Carrier concentration Efficiency Energy gap Film thickness Photonics Thin films Zinc Absorber layers AMPS-1D Efficiency increase Minority carrier Numerical modeling and analysis Output parameters Thin film solar cells Tunable Band-gap Solar cells |
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AMPS-1D Cd<sub>1-x</sub>Zn<sub>x</sub>Te solar cells Efficiency Thin film solar cells Tunable bandgap Cadmium alloys Carrier concentration Efficiency Energy gap Film thickness Photonics Thin films Zinc Absorber layers AMPS-1D Efficiency increase Minority carrier Numerical modeling and analysis Output parameters Thin film solar cells Tunable Band-gap Solar cells Imamzai M. Aghaei M. Amin N. Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness |
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The main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd 1-xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value of x). In this research AMPS-1D has been used for simulation. The results of this study indicate that by decreasing the absorber layer's thickness, the efficiency decreases. In the baseline cases, the absorber layer's bandgap was changed from 1.45eV to 2.05eV, It was found out that by increasing the energy gap, efficiency increases but after 1.85ev the bandgap will be constant, hence Eg=1.88eV was considered for absorber to analyze the baseline cases. It was observed that by increasing the lifetime and carrier concentrations of absorber layer, the output parameters increase in the cells. However, the baseline cases structures are the same (SnO 2/CdS/CdZnTe/Back Contact) and the highest conversion efficiency of 25.505% is obtained by baseline case 2 (Jsc= 29.819 mA/cm 2, Voc = 1.28 Volt, FF= 0.731) which has higher doping and minority carriers lifetime. � 2013 IEEE. |
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55833049900 |
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55833049900 Imamzai M. Aghaei M. Amin N. |
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Conference paper |
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Imamzai M. Aghaei M. Amin N. |
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Imamzai M. |
title |
Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness |
title_short |
Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness |
title_full |
Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness |
title_fullStr |
Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness |
title_full_unstemmed |
Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness |
title_sort |
numerical modeling and analysis of cds/cd1-xznx te solar cells as a function of cdznte doping, lifetime and thickness |
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2023 |
_version_ |
1806428180987248640 |
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13.222552 |