Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects

Crystal structure; Energy gap; Genetic algorithms; III-V semiconductors; Optical properties; Solar power generation; Structural design; Absorption coefficients; Bulk growth; Bulk III-V semiconductors; Bulk semiconductors; Comparatives studies; Future prospects; Property; Quaternary; Semiconductor cr...

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Main Authors: Lee H.J., Gamel M.M.A., Ker P.J., Jamaludin M.Z., Wong Y.H., David J.P.R.
Other Authors: 57190622221
Format: Review
Published: Springer 2023
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spelling my.uniten.dspace-266982023-05-29T17:36:14Z Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects Lee H.J. Gamel M.M.A. Ker P.J. Jamaludin M.Z. Wong Y.H. David J.P.R. 57190622221 57215306835 37461740800 57216839721 36605495300 25647614700 Crystal structure; Energy gap; Genetic algorithms; III-V semiconductors; Optical properties; Solar power generation; Structural design; Absorption coefficients; Bulk growth; Bulk III-V semiconductors; Bulk semiconductors; Comparatives studies; Future prospects; Property; Quaternary; Semiconductor crystals; Ternary; Infrared devices Over the last few decades, research works have focused on elucidating the optical properties of semiconductor materials. Despite remarkable progress in the measurement and calculation of the absorption coefficient for semiconductor materials, there is a lack of comprehensive review on the comparative study of absorption coefficient properties for different types of bulk semiconductor materials and their methods for calculating the absorption coefficient. Hence, this paper summarizes the fundamentals of the various methods used to determine the absorption coefficient properties of bulk growth semiconductor crystals, and discusses their advantages and disadvantages. Furthermore, this review provides comprehensive results from recent studies and findings on the absorption properties of near- to mid-infrared (wavelengths from 800 to 7300�nm) group III-V semiconductor materials. In addition, the absorption coefficient of the conventional group IV semiconductors (silicon and Ge) were included for performance comparison. Critical analysis was done for the reviewed materials concerning their material properties, such as band gap structure, crystal quality, and the structural design of the device. The related studies on the methods to determine the absorption coefficients of semiconductors and to improve the likelihood of absorption performance were well highlighted. This review also provides an in-depth discussion on the knowledge of absorption coefficient based on a wide range of semiconductor materials and their potential for sensors, photodetectors, solar and photovoltaic application in the near to mid infrared region. Lastly, the future prospects for research on absorption coefficients are discussed and the advancement in the determination of absorption coefficients for new ternary and quaternary materials is proposed using artificial intelligence such as neural networks and genetic algorithm. � 2022, The Minerals, Metals & Materials Society. Final 2023-05-29T09:36:14Z 2023-05-29T09:36:14Z 2022 Review 10.1007/s11664-022-09846-7 2-s2.0-85136657644 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85136657644&doi=10.1007%2fs11664-022-09846-7&partnerID=40&md5=f1110a5b7e7b8a2227ab4701e307b14c https://irepository.uniten.edu.my/handle/123456789/26698 51 11 6082 6107 All Open Access, Bronze Springer Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Crystal structure; Energy gap; Genetic algorithms; III-V semiconductors; Optical properties; Solar power generation; Structural design; Absorption coefficients; Bulk growth; Bulk III-V semiconductors; Bulk semiconductors; Comparatives studies; Future prospects; Property; Quaternary; Semiconductor crystals; Ternary; Infrared devices
author2 57190622221
author_facet 57190622221
Lee H.J.
Gamel M.M.A.
Ker P.J.
Jamaludin M.Z.
Wong Y.H.
David J.P.R.
format Review
author Lee H.J.
Gamel M.M.A.
Ker P.J.
Jamaludin M.Z.
Wong Y.H.
David J.P.R.
spellingShingle Lee H.J.
Gamel M.M.A.
Ker P.J.
Jamaludin M.Z.
Wong Y.H.
David J.P.R.
Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects
author_sort Lee H.J.
title Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects
title_short Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects
title_full Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects
title_fullStr Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects
title_full_unstemmed Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects
title_sort absorption coefficient of bulk iii-v semiconductor materials: a review on methods, properties and future prospects
publisher Springer
publishDate 2023
_version_ 1806428504748720128
score 13.222552