Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
Cadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Terna...
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my.uniten.dspace-263302023-05-29T17:09:11Z Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor Nurhafiza K. Chelvanathan P. Sobayel K. Munna F.T. Abdullah H. Ibrahim M.A. Techato K. Sopian K. Amin N. Akhtaruzzaman M. 57215945332 35766323200 57194049079 57200988091 26025061200 55843508000 25321184300 7003375391 7102424614 57195441001 Cadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Ternary semiconductors; Thin films Ternary semiconductor CdxZn(1?x)S thin films are prepared by chemical bath deposition (CBD) using N-methyl thiourea as an alternative sulfur precursor. Molar concentration of CdSO4 has been varied from 0.01 M to 0.09 M during the fabrication process of CdxZn(1?x)S thin film. Effect of variation in Cd2+ molar concentration on morphological, structural and opto-electrical properties of CdxZn(1?x)S thin film has been investigated. As grown films are found less crystalline and structural analysis suggests that CdxZn(1?x)S phase changes with the increase of Cd2+ molar concentration. SEM images reveals that all the films exhibit granules-like morphology. Raman peak indicates that higher concentration of CdSO4 precursor forms more CdS in the CdxZn(1?x)S. Bandgaps of CdxZn(1?x)S thin films are found to be ranged from 2.44 eV to 2.95 eV for different Cd2+ molar concentrations in the CdxZn(1?x)S thin films. Resistivity and carrier mobility of as grown CdxZn(1?x)S films ranged from 14.2 � 103 ohm-cm to 2.25 � 103 ohm-cm and 4.31 cm2 (V s)?1 to 9.42 cm2 (V s)?1, respectively. As all these findings affirms the credibility of using N-methyl thiourea as an alternative sulfur precursor for the development of CdxZn(1?x)S thin film by CBD process. � 2021 The Electrochemical Society Final 2023-05-29T09:09:11Z 2023-05-29T09:09:11Z 2021 Article 10.1149/2162-8777/abe58e 2-s2.0-85102595565 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102595565&doi=10.1149%2f2162-8777%2fabe58e&partnerID=40&md5=40a71c33959e8b195baae77d6b16554f https://irepository.uniten.edu.my/handle/123456789/26330 10 2 25009 IOP Publishing Ltd Scopus |
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Cadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Ternary semiconductors; Thin films |
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57215945332 Nurhafiza K. Chelvanathan P. Sobayel K. Munna F.T. Abdullah H. Ibrahim M.A. Techato K. Sopian K. Amin N. Akhtaruzzaman M. |
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Nurhafiza K. Chelvanathan P. Sobayel K. Munna F.T. Abdullah H. Ibrahim M.A. Techato K. Sopian K. Amin N. Akhtaruzzaman M. |
| spellingShingle |
Nurhafiza K. Chelvanathan P. Sobayel K. Munna F.T. Abdullah H. Ibrahim M.A. Techato K. Sopian K. Amin N. Akhtaruzzaman M. Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor |
| author_sort |
Nurhafiza K. |
| title |
Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor |
| title_short |
Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor |
| title_full |
Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor |
| title_fullStr |
Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor |
| title_full_unstemmed |
Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor |
| title_sort |
effect of cd2+ molar concentration in cdxzn(1?x)s thin film by chemical bath deposition technique using alternative sulfur precursor |
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IOP Publishing Ltd |
| publishDate |
2023 |
| _version_ |
1806427896728780800 |
| score |
13.211869 |