Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor

Cadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Terna...

Full description

Saved in:
Bibliographic Details
Main Authors: Nurhafiza K., Chelvanathan P., Sobayel K., Munna F.T., Abdullah H., Ibrahim M.A., Techato K., Sopian K., Amin N., Akhtaruzzaman M.
Other Authors: 57215945332
Format: Article
Published: IOP Publishing Ltd 2023
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-26330
record_format dspace
spelling my.uniten.dspace-263302023-05-29T17:09:11Z Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor Nurhafiza K. Chelvanathan P. Sobayel K. Munna F.T. Abdullah H. Ibrahim M.A. Techato K. Sopian K. Amin N. Akhtaruzzaman M. 57215945332 35766323200 57194049079 57200988091 26025061200 55843508000 25321184300 7003375391 7102424614 57195441001 Cadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Ternary semiconductors; Thin films Ternary semiconductor CdxZn(1?x)S thin films are prepared by chemical bath deposition (CBD) using N-methyl thiourea as an alternative sulfur precursor. Molar concentration of CdSO4 has been varied from 0.01 M to 0.09 M during the fabrication process of CdxZn(1?x)S thin film. Effect of variation in Cd2+ molar concentration on morphological, structural and opto-electrical properties of CdxZn(1?x)S thin film has been investigated. As grown films are found less crystalline and structural analysis suggests that CdxZn(1?x)S phase changes with the increase of Cd2+ molar concentration. SEM images reveals that all the films exhibit granules-like morphology. Raman peak indicates that higher concentration of CdSO4 precursor forms more CdS in the CdxZn(1?x)S. Bandgaps of CdxZn(1?x)S thin films are found to be ranged from 2.44 eV to 2.95 eV for different Cd2+ molar concentrations in the CdxZn(1?x)S thin films. Resistivity and carrier mobility of as grown CdxZn(1?x)S films ranged from 14.2 � 103 ohm-cm to 2.25 � 103 ohm-cm and 4.31 cm2 (V s)?1 to 9.42 cm2 (V s)?1, respectively. As all these findings affirms the credibility of using N-methyl thiourea as an alternative sulfur precursor for the development of CdxZn(1?x)S thin film by CBD process. � 2021 The Electrochemical Society Final 2023-05-29T09:09:11Z 2023-05-29T09:09:11Z 2021 Article 10.1149/2162-8777/abe58e 2-s2.0-85102595565 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102595565&doi=10.1149%2f2162-8777%2fabe58e&partnerID=40&md5=40a71c33959e8b195baae77d6b16554f https://irepository.uniten.edu.my/handle/123456789/26330 10 2 25009 IOP Publishing Ltd Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Cadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Ternary semiconductors; Thin films
author2 57215945332
author_facet 57215945332
Nurhafiza K.
Chelvanathan P.
Sobayel K.
Munna F.T.
Abdullah H.
Ibrahim M.A.
Techato K.
Sopian K.
Amin N.
Akhtaruzzaman M.
format Article
author Nurhafiza K.
Chelvanathan P.
Sobayel K.
Munna F.T.
Abdullah H.
Ibrahim M.A.
Techato K.
Sopian K.
Amin N.
Akhtaruzzaman M.
spellingShingle Nurhafiza K.
Chelvanathan P.
Sobayel K.
Munna F.T.
Abdullah H.
Ibrahim M.A.
Techato K.
Sopian K.
Amin N.
Akhtaruzzaman M.
Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
author_sort Nurhafiza K.
title Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
title_short Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
title_full Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
title_fullStr Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
title_full_unstemmed Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor
title_sort effect of cd2+ molar concentration in cdxzn(1?x)s thin film by chemical bath deposition technique using alternative sulfur precursor
publisher IOP Publishing Ltd
publishDate 2023
_version_ 1806427896728780800
score 13.214268