Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique
Aspect ratio; Catalysts; Efficiency; Etching; Hydrofluoric acid; Metals; Microelectronics; Microstructure; Photonic devices; Silicon solar cells; Silicon wafers; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Silicon nano structure...
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-261402023-05-29T17:07:07Z Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. 54397656800 7102424614 57216824752 7003375391 57195441001 Aspect ratio; Catalysts; Efficiency; Etching; Hydrofluoric acid; Metals; Microelectronics; Microstructure; Photonic devices; Silicon solar cells; Silicon wafers; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Silicon nano structure (SiNS); Silicon nanowire; Solar cell efficiencies; Texturing and solar cell; Vertical wells; Nanowires Silicon nanostructures are one of the candidates for tomorrow technologies due to its novel physical properties. High-aspect-ratio silicon nanostructures have been proved as effective microstructures for enhance silicon solar cells efficiency. Silicon nanowires enhance solar cells efficiency by formation vertical well aligned nanowires on the top surfaces which give effects to the optical, electronic and physical properties of silicon solar cells. Silicon nanowires also can enhance the carrier collection of photovoltaic devices. There are two types of methods used to fabricate silicon nanowires such as top-down or bottom-up fabrication. One of the techniques to get high-aspect-ratio nanostructures is by using metal-assisted chemical etching (MACE). Metal-assisted chemical etching (MACE) technique has been adopted in many research experiments and technology due to its low cost fabrication of silicon nanowires but can form a high-aspect-ratio of silicon nanowires. MACE has demonstrates outstanding results of silicon nanowires in improving many microelectronics and photonic devices. Traditionally, MACE is operated by making a holes using metal catalyst in order to reduce of using the etchant. The mobility of the reactants impeded when the height of silicon nanowires increases which resulting insufficient holes. However, MACE also has advantages and drawbacks which appear such as long-vertical-well aligned silicon nanowires and some broken silicon nanowires due to very thin silicon nanowires which easily to break, respectively. In this paper, different solutions concentration is study using a two-step MACE process. The chemical solution contains HF/AgNO3 and also H2O2. The experiment is conducted at room temperature. During the etching process, anisotropic growth different silver particles which used for the formation of the silicon nanowires on silicon wafer surfaces. As a results, the etch rate gives the effect on the silicon nanowires length. A comparative study of etch rate has been conducted in order to see clearly the differences. � 2021 IEEE. Final 2023-05-29T09:07:07Z 2023-05-29T09:07:07Z 2021 Conference Paper 10.1109/PVSC43889.2021.9518753 2-s2.0-85115936967 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115936967&doi=10.1109%2fPVSC43889.2021.9518753&partnerID=40&md5=e2f5bd552bb22f8c71a62e154f8c4c95 https://irepository.uniten.edu.my/handle/123456789/26140 2600 2603 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Aspect ratio; Catalysts; Efficiency; Etching; Hydrofluoric acid; Metals; Microelectronics; Microstructure; Photonic devices; Silicon solar cells; Silicon wafers; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Silicon nano structure (SiNS); Silicon nanowire; Solar cell efficiencies; Texturing and solar cell; Vertical wells; Nanowires |
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54397656800 |
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54397656800 Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. |
| format |
Conference Paper |
| author |
Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. |
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Razak N.H.A. Amin N. Kiong T.S. Sopian K. Akhtaruzzaman M. Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique |
| author_sort |
Razak N.H.A. |
| title |
Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_short |
Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_full |
Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_fullStr |
Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_full_unstemmed |
Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique |
| title_sort |
create high-aspect-ratio silicon nanostructures using metal-assisted chemical etching (mace) technique |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806425658906116096 |
| score |
13.214268 |