Work function variations on electrostatic and RF performances of JLSDGM Device
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under...
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| 主要な著者: | , , , , |
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| その他の著者: | |
| フォーマット: | 論文 |
| 出版事項: |
Institute of Advanced Engineering and Science
2023
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