Work function variations on electrostatic and RF performances of JLSDGM Device

• المؤلفون الرئيسيون: Kaharudin K.K.E., Zain A.S.M., Roslan A.F., Ahmad I., Salehuddin F.
• مؤلفون آخرون: 56472706900
• التنسيق: مقال
• منشور في: Institute of Advanced Engineering and Science 2023

This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under...