Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature
Carrier concentration; Copper compounds; Crystallinity; Crystallite size; Energy gap; Morphology; Semiconducting tin compounds; Sol-gel process; Sol-gels; Solar cells; Surface morphology; Zinc compounds; Condition; CZTS; Preheating temperature; Processing temperature; Role of solvents; Semiconductor...
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2023
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my.uniten.dspace-260332023-05-29T17:06:14Z Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature Ahmoum H. Chelvanathan P. Su'ait M.S. Boughrara M. Li G. Gebauer R. Sopian K. Kerouad M. Amin N. Wang Q. 57200444252 35766323200 57223117728 14036797900 8508360000 57205959220 7003375391 6701564709 7102424614 57199479547 Carrier concentration; Copper compounds; Crystallinity; Crystallite size; Energy gap; Morphology; Semiconducting tin compounds; Sol-gel process; Sol-gels; Solar cells; Surface morphology; Zinc compounds; Condition; CZTS; Preheating temperature; Processing temperature; Role of solvents; Semiconductors thin films; Sol'gel; Solvent removal; Sulphuration; Thin-films; Thin films The conditions under which thin films are deposited are the most important parameter determining the physical performance of devices. In this work, we present the effect of preheating temperatures under N2 ambient conditions on the quality of Cu2ZnSnS4 (CZTS) thin films. Herein we are interested in the structural, morphological, vibrational, optical and electrical characteristics of CZTS layers, synthesized using the sol-gel method. CZTS layers were deposited at preheating temperatures of 200 �C, 250 �C and 300 �C under N2 ambient atmosphere prior to a 1-h sulphuration process at 580 �C. XRD results confirm the dependence of the crystallite size on temperature. All the deposited layers are in stannite phase, confirmed by Raman spectroscopy, and the electrical properties show that all films obtained are p-type semiconductors with a carrier charge concentration of 4.06�9.48 � 1020 cm?3. CZTS films preheated at 300 �C show better crystallinity, larger grains, more suitable band gap, higher electrical conductivity and improved surface morphology compared to the rest of the thin films, which indicates that the method proposed here can be used to deposited high quality absorber layers of CZTS for solar cells applications. � 2021 Elsevier Ltd Final 2023-05-29T09:06:14Z 2023-05-29T09:06:14Z 2021 Article 10.1016/j.mssp.2021.105874 2-s2.0-85105312641 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85105312641&doi=10.1016%2fj.mssp.2021.105874&partnerID=40&md5=b1b4861a7537c24310c736c7427f9e8d https://irepository.uniten.edu.my/handle/123456789/26033 132 105874 Elsevier Ltd Scopus |
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Carrier concentration; Copper compounds; Crystallinity; Crystallite size; Energy gap; Morphology; Semiconducting tin compounds; Sol-gel process; Sol-gels; Solar cells; Surface morphology; Zinc compounds; Condition; CZTS; Preheating temperature; Processing temperature; Role of solvents; Semiconductors thin films; Sol'gel; Solvent removal; Sulphuration; Thin-films; Thin films |
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57200444252 |
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57200444252 Ahmoum H. Chelvanathan P. Su'ait M.S. Boughrara M. Li G. Gebauer R. Sopian K. Kerouad M. Amin N. Wang Q. |
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Article |
| author |
Ahmoum H. Chelvanathan P. Su'ait M.S. Boughrara M. Li G. Gebauer R. Sopian K. Kerouad M. Amin N. Wang Q. |
| spellingShingle |
Ahmoum H. Chelvanathan P. Su'ait M.S. Boughrara M. Li G. Gebauer R. Sopian K. Kerouad M. Amin N. Wang Q. Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature |
| author_sort |
Ahmoum H. |
| title |
Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature |
| title_short |
Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature |
| title_full |
Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature |
| title_fullStr |
Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature |
| title_full_unstemmed |
Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature |
| title_sort |
sol-gel prepared cu2znsns4 (czts) semiconductor thin films: role of solvent removal processing temperature |
| publisher |
Elsevier Ltd |
| publishDate |
2023 |
| _version_ |
1806425550030372864 |
| score |
13.214268 |