Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering
Annealing; Borosilicate glass; Carrier concentration; Energy gap; II-VI semiconductors; Magnetron sputtering; Optical properties; Selenium compounds; Substrates; Thin film solar cells; Thin films; Vacuum furnaces; X ray diffraction; Annealing temperatures; Borosilicate glass substrates; Hall effect...
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2023
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my.uniten.dspace-251252023-05-29T16:06:53Z Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering Rosly H.N. Rahman K.S. Harif M.N. Doroody C. Isah M. Misran H. Amin N. 36873451800 56348138800 22634024000 56905467200 57219626175 6506899840 7102424614 Annealing; Borosilicate glass; Carrier concentration; Energy gap; II-VI semiconductors; Magnetron sputtering; Optical properties; Selenium compounds; Substrates; Thin film solar cells; Thin films; Vacuum furnaces; X ray diffraction; Annealing temperatures; Borosilicate glass substrates; Hall effect measurement; Optoelectrical properties; Preferred orientations; Radio frequency magnetron sputtering; rf-Magnetron sputtering; Solar-cell applications; Cadmium compounds Cadmium selenide (CdSe) thin films are widely used in electronic devices as well as a potential window material in solar cell applications. In this study, 100 nm CdSe thin films were grown on borosilicate glass substrates by using Radio Frequency (RF) magnetron sputtering technique at room temperature (25 �C). Deposited films were annealed in a vacuum furnace at 100 �C, 200 �C, 300 �C, 400 �C and 500 �C for 10 min, respectively. In-depth analysis of the microstructural and optoelectrical properties of annealed films were performed using X-ray diffraction (XRD), UV�Vis spectrometry and Hall Effect measurements. From XRD results, the films illustrated hexagonal structure with preferred orientation (002) at 2? = 24.12�. UV�Vis study indicated that the transmission ranges were from 75% to over 85% for annealed samples and the calculated optical band gap was in the range 1.65 eV�1.73 eV. Optical properties demonstrated that CdSe had the potential to be incorporated as a window layer in solar cells. Meanwhile, the electrical measurements showed n-type conductivity with the carrier concentration of 1014 cm?3 for all the annealed films. The optimized results recommend sputtered CdSe thin films annealed at 400 �C as a possible window layer to the Cd-based solar cells. � 2020 Elsevier Ltd Final 2023-05-29T08:06:53Z 2023-05-29T08:06:53Z 2020 Article 10.1016/j.spmi.2020.106716 2-s2.0-85094322571 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094322571&doi=10.1016%2fj.spmi.2020.106716&partnerID=40&md5=8436dd1d9a8ad42b13ea767c32fef117 https://irepository.uniten.edu.my/handle/123456789/25125 148 106716 Academic Press Scopus |
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Annealing; Borosilicate glass; Carrier concentration; Energy gap; II-VI semiconductors; Magnetron sputtering; Optical properties; Selenium compounds; Substrates; Thin film solar cells; Thin films; Vacuum furnaces; X ray diffraction; Annealing temperatures; Borosilicate glass substrates; Hall effect measurement; Optoelectrical properties; Preferred orientations; Radio frequency magnetron sputtering; rf-Magnetron sputtering; Solar-cell applications; Cadmium compounds |
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36873451800 Rosly H.N. Rahman K.S. Harif M.N. Doroody C. Isah M. Misran H. Amin N. |
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Article |
| author |
Rosly H.N. Rahman K.S. Harif M.N. Doroody C. Isah M. Misran H. Amin N. |
| spellingShingle |
Rosly H.N. Rahman K.S. Harif M.N. Doroody C. Isah M. Misran H. Amin N. Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering |
| author_sort |
Rosly H.N. |
| title |
Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering |
| title_short |
Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering |
| title_full |
Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering |
| title_fullStr |
Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering |
| title_full_unstemmed |
Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering |
| title_sort |
annealing temperature assisted microstructural and optoelectrical properties of cdse thin film grown by rf magnetron sputtering |
| publisher |
Academic Press |
| publishDate |
2023 |
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1806424303660433408 |
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13.214268 |