Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device
Lead compounds; Molar ratio; Morphology; Nanoparticles; organic-inorganic materials; Perovskite; Rhenium compounds; RRAM; Titanium dioxide; Bi-layer devices; Carrier injection; Hybrid organic-inorganic; Multiple applications; Resistive Random Access Memory (ReRAM); Surface coverages; Titanium dioxid...
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2023
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my.uniten.dspace-250712023-05-29T16:06:39Z Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device Thien G.S.H. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Chanlek N. Goh B.T. 56152438600 55576358000 26649255900 36562269300 55651673700 24775167600 24398718100 Lead compounds; Molar ratio; Morphology; Nanoparticles; organic-inorganic materials; Perovskite; Rhenium compounds; RRAM; Titanium dioxide; Bi-layer devices; Carrier injection; Hybrid organic-inorganic; Multiple applications; Resistive Random Access Memory (ReRAM); Surface coverages; Titanium dioxides (TiO2); Two-step coatings; TiO2 nanoparticles Reducing pinholes formation and enhancing surface coverage of hybrid organic-inorganic halide perovskite (MAPbI3) film is critical in most application such as photovoltaics and memory device. These applications usually incorporate Titanium Dioxide (TiO2) which is widely used to improve carrier injection as well as film morphology. Taking into account the fabrication and preparation cost, rather than forming a bilayer device, this work demonstrates the design of a facile two-step coating method in producing higher surface quality of single layer MAPbI3 modified with the addition of TiO2 nanoparticles. The study of this novel MAPbI3-TiO2 compound reveals an enhanced movement of iodide vacancies towards the ITO interfaces while considering the effect of grain size and film uniformity. Hence, the Resistive Random Access Memory (ReRAM) devices employing the MAPbI3-TiO2 compound shows to aid in improving VSET and VRESET voltage values in which molar ratio of Pb to Ti of 5% in MAPbI3-TiO2 layer shows improved VSET and VRESET values of 3.6 V and ?1.1 V. This study is believed to aid as a forefront in understanding the applicability of a single layer MAPbI3-TiO2 in multiple applications. � 2020 Elsevier Ltd and Techna Group S.r.l. Final 2023-05-29T08:06:39Z 2023-05-29T08:06:39Z 2020 Article 10.1016/j.ceramint.2020.08.075 2-s2.0-85089558726 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85089558726&doi=10.1016%2fj.ceramint.2020.08.075&partnerID=40&md5=4e53c9186cf2c853671c10023526a268 https://irepository.uniten.edu.my/handle/123456789/25071 46 18 29041 29051 Elsevier Ltd Scopus |
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Lead compounds; Molar ratio; Morphology; Nanoparticles; organic-inorganic materials; Perovskite; Rhenium compounds; RRAM; Titanium dioxide; Bi-layer devices; Carrier injection; Hybrid organic-inorganic; Multiple applications; Resistive Random Access Memory (ReRAM); Surface coverages; Titanium dioxides (TiO2); Two-step coatings; TiO2 nanoparticles |
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56152438600 |
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56152438600 Thien G.S.H. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Chanlek N. Goh B.T. |
| format |
Article |
| author |
Thien G.S.H. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Chanlek N. Goh B.T. |
| spellingShingle |
Thien G.S.H. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Chanlek N. Goh B.T. Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device |
| author_sort |
Thien G.S.H. |
| title |
Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device |
| title_short |
Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device |
| title_full |
Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device |
| title_fullStr |
Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device |
| title_full_unstemmed |
Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device |
| title_sort |
improvement of mapbi3 perovskite blend with tio2 nanoparticles as reram device |
| publisher |
Elsevier Ltd |
| publishDate |
2023 |
| _version_ |
1806423459996106752 |
| score |
13.214268 |