Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors
Copper compounds; Copper metallography; Deposition; Efficiency; Energy gap; Fabrication; IV-VI semiconductors; Layered semiconductors; Metals; Solar power generation; Thin film solar cells; Thin films; Tin metallography; Fabrication technique; Microstructural degradation; P type conductivity; Photov...
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2023
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my.uniten.dspace-250462023-05-29T15:30:58Z Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors Hossain E.S. Chelvanathan P. Shahahmadi S.A. Bais B. Akhtaruzzaman M. Tiong S.K. Sopian K. Amin N. 57196058952 35766323200 55567116600 9638472600 57195441001 15128307800 7003375391 7102424614 Copper compounds; Copper metallography; Deposition; Efficiency; Energy gap; Fabrication; IV-VI semiconductors; Layered semiconductors; Metals; Solar power generation; Thin film solar cells; Thin films; Tin metallography; Fabrication technique; Microstructural degradation; P type conductivity; Photovoltaic devices; Photovoltaic technology; Polycrystalline film; Secondary phase; Thin-film depositions; Tin compounds; correlation; decomposition; degradation; efficiency measurement; electronic equipment; equipment; film; fuel cell; inorganic compound; performance assessment; photovoltaic system; technological change In this present work, we report a novel fabrication technique of ternary Cu2SnS3 (CTS) thin films by sulphurization of sequentially sputtered Sn/CuSn (elemental/alloy) stacked metallic precursors. The focal aim of our investigation is on the impact of metallic precursors� Cu/Sn ratio on the overall material properties of CTS films, which in turn, influence the photovoltaic device performance. All CTSs exhibited polycrystalline films with a mixture monoclinic CTS and orthorhombic SnS compound, p-type conductivity, and optical band gap in the range of 0.84�0.90 eV. Metallic precursor with Cu/Sn ratio of 1.09 produced optimum CTS film with post-sulphurization Cu/Sn ratio of 1.98 and highest conversion efficiency of 0.71%, respectively, despite exhibiting pronounced formation of SnS secondary phase. The correlation between XRD, Raman, and SEM-EDX outcomes revealed that CTS films from metallic precursors with Cu/Sn ratio higher than 1.09 undergo severe microstructural degradation due to Sn-loss through decomposition of volatile SnS phase and consequently, resulted in poorer absorber layer quality and lower device performance. Finally, several efficiency impeding factors are discussed and practical propostions to overcome them are presented. � 2018 Elsevier Ltd Final 2023-05-29T07:30:58Z 2023-05-29T07:30:58Z 2019 Article 10.1016/j.solener.2018.10.081 2-s2.0-85056565604 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056565604&doi=10.1016%2fj.solener.2018.10.081&partnerID=40&md5=8bb77954b6d63ba494a0990d0da6cc55 https://irepository.uniten.edu.my/handle/123456789/25046 177 262 273 Elsevier Ltd Scopus |
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Copper compounds; Copper metallography; Deposition; Efficiency; Energy gap; Fabrication; IV-VI semiconductors; Layered semiconductors; Metals; Solar power generation; Thin film solar cells; Thin films; Tin metallography; Fabrication technique; Microstructural degradation; P type conductivity; Photovoltaic devices; Photovoltaic technology; Polycrystalline film; Secondary phase; Thin-film depositions; Tin compounds; correlation; decomposition; degradation; efficiency measurement; electronic equipment; equipment; film; fuel cell; inorganic compound; performance assessment; photovoltaic system; technological change |
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57196058952 Hossain E.S. Chelvanathan P. Shahahmadi S.A. Bais B. Akhtaruzzaman M. Tiong S.K. Sopian K. Amin N. |
| format |
Article |
| author |
Hossain E.S. Chelvanathan P. Shahahmadi S.A. Bais B. Akhtaruzzaman M. Tiong S.K. Sopian K. Amin N. |
| spellingShingle |
Hossain E.S. Chelvanathan P. Shahahmadi S.A. Bais B. Akhtaruzzaman M. Tiong S.K. Sopian K. Amin N. Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors |
| author_sort |
Hossain E.S. |
| title |
Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors |
| title_short |
Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors |
| title_full |
Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors |
| title_fullStr |
Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors |
| title_full_unstemmed |
Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors |
| title_sort |
fabrication of cu2sns3 thin film solar cells by sulphurization of sequentially sputtered sn/cusn metallic stacked precursors |
| publisher |
Elsevier Ltd |
| publishDate |
2023 |
| _version_ |
1806425527870816256 |
| score |
13.214268 |