Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation
Cadmium alloys; Cadmium sulfide; Cadmium sulfide solar cells; Cadmium telluride; Copper compounds; Energy gap; II-VI semiconductors; Open circuit voltage; Reflection; Semiconducting cadmium telluride; Semiconducting tellurium compounds; Semiconductor doping; Solar cells; Solar power generation; Tran...
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2023
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my.uniten.dspace-247232023-05-29T15:26:15Z Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation Das N.K. Sengupta A.K. Dey M. Rahman K.S. Matin M.A. Amin N. 34867805900 57210525055 56297554400 56348138800 57220488718 7102424614 Cadmium alloys; Cadmium sulfide; Cadmium sulfide solar cells; Cadmium telluride; Copper compounds; Energy gap; II-VI semiconductors; Open circuit voltage; Reflection; Semiconducting cadmium telluride; Semiconducting tellurium compounds; Semiconductor doping; Solar cells; Solar power generation; Transparent conducting oxides; Wide band gap semiconductors; Zinc alloys; Zinc sulfide; Back contact; CdTe solar cells; Doping concentration; Optoelectronic properties; Recombination loss; Solar photovoltaics; Window layer; ZnTe:Cu electron reflector; Semiconducting cadmium compounds CdTe is a very potential binary semiconductor material for solar photovoltaic application due to its superior optoelectronic properties. The overall performances of incorporating Cd1-XZnxS window layer in lieu of CdS layer in CdTe solar cell were investigated by SCAPS-1D simulator. The Cd1-XZnxS is an alloy of CdS and ZnS which increase band gap of window layer from 2.42 e V to 3.7 e V as a function of x (from x=0 to 1). The spectral response of the design Cd1-xZnxS}/CdTe cell improves in blue region which implies the big improvement of short-circuit current density Jsc. In addition, in the traditional back contact of CdTe cell a small positive conduction band (? Ec} < 0.3eV) offset is necessary to reduce the forward current J0 as well as the recombination losses in the back contact interface. To achieve this goal a highly doped ZnTe: Cu extra layer was used as an electron reflector (ER) above back contact. Furthermore, this ER interface allows electron tunnelling by reducing the barrier height of the valence band which in turn leads to an improvement of open-circuit voltage and fill factor. The performance of the proposed cell was examined by varying thickness and doping concentration of Transparent Conducting Oxide (TCO) layer, window layer, absorber layer and finally ER layer. The simulated results of the proposed cell had shown that the open-circuit voltage (Voc) overcame the 1-volt barrier of CdTe cell with energy conversion efficiencies of 19.93 %. � 2019 IEEE. Final 2023-05-29T07:26:15Z 2023-05-29T07:26:15Z 2019 Conference Paper 10.1109/ECACE.2019.8679444 2-s2.0-85064660152 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064660152&doi=10.1109%2fECACE.2019.8679444&partnerID=40&md5=37c5cdf6b6b8dc012290b745bf954914 https://irepository.uniten.edu.my/handle/123456789/24723 8679444 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Cadmium alloys; Cadmium sulfide; Cadmium sulfide solar cells; Cadmium telluride; Copper compounds; Energy gap; II-VI semiconductors; Open circuit voltage; Reflection; Semiconducting cadmium telluride; Semiconducting tellurium compounds; Semiconductor doping; Solar cells; Solar power generation; Transparent conducting oxides; Wide band gap semiconductors; Zinc alloys; Zinc sulfide; Back contact; CdTe solar cells; Doping concentration; Optoelectronic properties; Recombination loss; Solar photovoltaics; Window layer; ZnTe:Cu electron reflector; Semiconducting cadmium compounds |
| author2 |
34867805900 |
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34867805900 Das N.K. Sengupta A.K. Dey M. Rahman K.S. Matin M.A. Amin N. |
| format |
Conference Paper |
| author |
Das N.K. Sengupta A.K. Dey M. Rahman K.S. Matin M.A. Amin N. |
| spellingShingle |
Das N.K. Sengupta A.K. Dey M. Rahman K.S. Matin M.A. Amin N. Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation |
| author_sort |
Das N.K. |
| title |
Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation |
| title_short |
Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation |
| title_full |
Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation |
| title_fullStr |
Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation |
| title_full_unstemmed |
Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation |
| title_sort |
effect of cd1-xznxs window layer incorporation in cdte solar cell by numerical simulation |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806425729931411456 |
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13.18916 |