Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes
Charge trapping; Electrodes; organic-inorganic materials; Perovskite; Silver; Switching; Filamentary conduction; Memory applications; Organic-inorganic; Organic-inorganic hybrid; Resistive Random Access Memory (ReRAM); Resistive switching; Resistive switching memory; Write-once-read-many; Random acc...
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Elsevier B.V.
2023
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my.uniten.dspace-246892023-05-29T15:25:53Z Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes How G.T.S. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Goh B.T. 56152438600 55576358000 26649255900 36562269300 55651673700 24398718100 Charge trapping; Electrodes; organic-inorganic materials; Perovskite; Silver; Switching; Filamentary conduction; Memory applications; Organic-inorganic; Organic-inorganic hybrid; Resistive Random Access Memory (ReRAM); Resistive switching; Resistive switching memory; Write-once-read-many; Random access storage The utilization of defects in organic-inorganic hybrid perovskite materials such as CH 3 NH 3 PbI 3 is beneficial for memory applications. In this work, a simple CH 3 NH 3 PbI 3 memory device with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au) yielded different switching behaviours. Using Al in ITO/CH 3 NH 3 PbI 3 /Al device reveals Resistive Random Access Memory (ReRAM) behaviour with a SET voltage of 4.5 V and can be RESET by applying a negative sweep voltage above 1.3 V due to the formation of iodide vacancy filament. Interestingly, by using Ag and Au cathodes to replace Al, yielded Write-Once-Read-Many (WORM) resistive switching characteristics. The conversion process from OFF to ON occur at around 4.7 V and 4.0 V for Ag and Au, respectively. The �shorting effect� remains even though a reverse voltage was applied indicating data retention. These fabricated devices could contribute to further understanding of selecting the right electrodes and open up new possibility of studies in the direction of resistive switching memory applications. � 2018 Elsevier B.V. Final 2023-05-29T07:25:53Z 2023-05-29T07:25:53Z 2019 Article 10.1016/j.apsusc.2018.12.124 2-s2.0-85058619067 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85058619067&doi=10.1016%2fj.apsusc.2018.12.124&partnerID=40&md5=cdd70c9f6d13054a35e71c691c3fc869 https://irepository.uniten.edu.my/handle/123456789/24689 473 194 202 Elsevier B.V. Scopus |
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Charge trapping; Electrodes; organic-inorganic materials; Perovskite; Silver; Switching; Filamentary conduction; Memory applications; Organic-inorganic; Organic-inorganic hybrid; Resistive Random Access Memory (ReRAM); Resistive switching; Resistive switching memory; Write-once-read-many; Random access storage |
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56152438600 How G.T.S. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Goh B.T. |
| format |
Article |
| author |
How G.T.S. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Goh B.T. |
| spellingShingle |
How G.T.S. Talik N.A. Yap B.K. Nakajima H. Tunmee S. Goh B.T. Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes |
| author_sort |
How G.T.S. |
| title |
Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes |
| title_short |
Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes |
| title_full |
Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes |
| title_fullStr |
Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes |
| title_full_unstemmed |
Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes |
| title_sort |
multiple resistive switching behaviours of ch 3 nh 3 pbi 3 perovskite film with different metal electrodes |
| publisher |
Elsevier B.V. |
| publishDate |
2023 |
| _version_ |
1806427427678715904 |
| score |
13.214268 |