Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell
Cells; Cytology; Efficiency; III-V semiconductors; Indium; Infrared radiation; Nanoelectronics; Narrow band gap semiconductors; Open circuit voltage; Electrical characteristic; III-IV semiconductors; InAs; Silvaco; Simulation and optimization; Thermophoto voltaic cells; Thermophotovoltaic devices; T...
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-245072023-05-29T15:24:04Z Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell Wong B.W.A. Gamel M.M.A. Lee H.J. Rashid W.E. Yao L.K. Jern K.P. 57215329405 57215306835 57190622221 57204586520 56903550000 37461740800 Cells; Cytology; Efficiency; III-V semiconductors; Indium; Infrared radiation; Nanoelectronics; Narrow band gap semiconductors; Open circuit voltage; Electrical characteristic; III-IV semiconductors; InAs; Silvaco; Simulation and optimization; Thermophoto voltaic cells; Thermophotovoltaic devices; Thickness; Indium arsenide Thermophotovoltaic (TPV) devices are known for capturing infrared radiation from a high temperature heat source and converting them into electricity. While InAs TPV cells have the ability to harvest radiation heat from temperature source below 1000 K, the best-reported homojunction InAs efficiency is only 0.6 % under 1000 K. This is due to the lack of an optimize structure for TPV application. This research work investigates on optimizing the emitter thickness for Indium Arsenide (InAs) based TPV cells. The electrical characteristics of the InAs TPV cell were simulated using the SILVACO TCAD software. The thickness of p-type emitter ranging from 0.1 to 2.3\ \boldsymbol{\mu} \mathbf{m} were investigated. As the emitter thickness increases, the open circuit voltage (\boldsymbol{V-{oc}}) increases, while the short-circuit current density (\boldsymbol{J-{sc}}) decreases. With the increase rate of \boldsymbol{V-{oc}} which is faster than the decreasing rate of \boldsymbol{J-{sc}}, the maximum power efficiency was achieved at an optimum thickness of 1.5\ \boldsymbol{\mu} \mathbf{m}. At 800 �C blackbody temperature, the highest power efficiency was acquired as 0.61 % at the optimum emitter thickness. � 2019 IEEE. Final 2023-05-29T07:24:04Z 2023-05-29T07:24:04Z 2019 Conference Paper 10.1109/RSM46715.2019.8943553 2-s2.0-85078299166 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078299166&doi=10.1109%2fRSM46715.2019.8943553&partnerID=40&md5=d92591347ff72fdba64ccb003271df96 https://irepository.uniten.edu.my/handle/123456789/24507 8943553 133 136 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Cells; Cytology; Efficiency; III-V semiconductors; Indium; Infrared radiation; Nanoelectronics; Narrow band gap semiconductors; Open circuit voltage; Electrical characteristic; III-IV semiconductors; InAs; Silvaco; Simulation and optimization; Thermophoto voltaic cells; Thermophotovoltaic devices; Thickness; Indium arsenide |
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57215329405 |
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57215329405 Wong B.W.A. Gamel M.M.A. Lee H.J. Rashid W.E. Yao L.K. Jern K.P. |
| format |
Conference Paper |
| author |
Wong B.W.A. Gamel M.M.A. Lee H.J. Rashid W.E. Yao L.K. Jern K.P. |
| spellingShingle |
Wong B.W.A. Gamel M.M.A. Lee H.J. Rashid W.E. Yao L.K. Jern K.P. Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell |
| author_sort |
Wong B.W.A. |
| title |
Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell |
| title_short |
Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell |
| title_full |
Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell |
| title_fullStr |
Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell |
| title_full_unstemmed |
Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell |
| title_sort |
simulation and optimization of emitter thickness for indium arsenide-based thermophotovoltaic cell |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806426299989753856 |
| score |
13.214268 |