Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film
Layered semiconductors; Molybdenum compounds; Molybdenum plating; Sputtering; Controllable formation; Crystallographic orientations; Czts solar cells; Mo films; MoS2; Packing factor; Sulphurization; Vacuum thermal annealing; Thin films
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Elsevier B.V.
2023
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my.uniten.dspace-238252023-05-29T14:52:11Z Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film Chelvanathan P. Shahahmadi S.A. Ferdaous M.T. Sapeli M.M.I. Sopian K. Amin N. 35766323200 55567116600 55567613100 57201282111 7003375391 7102424614 Layered semiconductors; Molybdenum compounds; Molybdenum plating; Sputtering; Controllable formation; Crystallographic orientations; Czts solar cells; Mo films; MoS2; Packing factor; Sulphurization; Vacuum thermal annealing; Thin films In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation. � 2018 Elsevier B.V. Final 2023-05-29T06:52:11Z 2023-05-29T06:52:11Z 2018 Article 10.1016/j.matlet.2018.02.087 2-s2.0-85042423657 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042423657&doi=10.1016%2fj.matlet.2018.02.087&partnerID=40&md5=4e41d0b9f04ca98adeba13431b930828 https://irepository.uniten.edu.my/handle/123456789/23825 219 174 177 Elsevier B.V. Scopus |
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Layered semiconductors; Molybdenum compounds; Molybdenum plating; Sputtering; Controllable formation; Crystallographic orientations; Czts solar cells; Mo films; MoS2; Packing factor; Sulphurization; Vacuum thermal annealing; Thin films |
| author2 |
35766323200 |
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35766323200 Chelvanathan P. Shahahmadi S.A. Ferdaous M.T. Sapeli M.M.I. Sopian K. Amin N. |
| format |
Article |
| author |
Chelvanathan P. Shahahmadi S.A. Ferdaous M.T. Sapeli M.M.I. Sopian K. Amin N. |
| spellingShingle |
Chelvanathan P. Shahahmadi S.A. Ferdaous M.T. Sapeli M.M.I. Sopian K. Amin N. Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| author_sort |
Chelvanathan P. |
| title |
Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| title_short |
Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| title_full |
Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| title_fullStr |
Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| title_full_unstemmed |
Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| title_sort |
controllable formation of mos2 via preferred crystallographic orientation modulation of dc-sputtered mo thin film |
| publisher |
Elsevier B.V. |
| publishDate |
2023 |
| _version_ |
1806428432361324544 |
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13.188404 |