Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
Chromium; Copper compounds; Defects; Magnetrons; Semiconductor doping; Sputtering; Chromium concentration; Co-sputtering techniques; Cr-doping; CZTS; Magnetron co-sputtering; Optoelectronic; Optoelectronic properties; Valence-band maximums; Tin compounds
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Elsevier B.V.
2023
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my.uniten.dspace-237982023-05-29T14:51:55Z Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering Sapeli M.M.I. Ferdaous M.T. Shahahmadi S.A. Sopian K. Chelvanathan P. Amin N. 57201282111 55567613100 55567116600 7003375391 35766323200 7102424614 Chromium; Copper compounds; Defects; Magnetrons; Semiconductor doping; Sputtering; Chromium concentration; Co-sputtering techniques; Cr-doping; CZTS; Magnetron co-sputtering; Optoelectronic; Optoelectronic properties; Valence-band maximums; Tin compounds In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 �m was observed for the doped sample. Bandgap was found to vary (1.51�1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20�0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. � 2018 Final 2023-05-29T06:51:55Z 2023-05-29T06:51:55Z 2018 Article 10.1016/j.matlet.2018.03.056 2-s2.0-85044030222 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044030222&doi=10.1016%2fj.matlet.2018.03.056&partnerID=40&md5=333a93ab87ab78c85dae06a021f0a665 https://irepository.uniten.edu.my/handle/123456789/23798 221 22 25 Elsevier B.V. Scopus |
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Chromium; Copper compounds; Defects; Magnetrons; Semiconductor doping; Sputtering; Chromium concentration; Co-sputtering techniques; Cr-doping; CZTS; Magnetron co-sputtering; Optoelectronic; Optoelectronic properties; Valence-band maximums; Tin compounds |
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57201282111 Sapeli M.M.I. Ferdaous M.T. Shahahmadi S.A. Sopian K. Chelvanathan P. Amin N. |
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Article |
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Sapeli M.M.I. Ferdaous M.T. Shahahmadi S.A. Sopian K. Chelvanathan P. Amin N. |
| spellingShingle |
Sapeli M.M.I. Ferdaous M.T. Shahahmadi S.A. Sopian K. Chelvanathan P. Amin N. Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering |
| author_sort |
Sapeli M.M.I. |
| title |
Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering |
| title_short |
Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering |
| title_full |
Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering |
| title_fullStr |
Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering |
| title_full_unstemmed |
Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering |
| title_sort |
effects of cr doping in the structural and optoelectronic properties of cu2znsns4 (czts) thin film by magnetron co-sputtering |
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Elsevier B.V. |
| publishDate |
2023 |
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1806424368702554112 |
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13.214268 |