Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell
Copper compounds; Efficiency; Gallium compounds; Layered semiconductors; Molybdenum oxide; Plasma jets; Solar cells; Thin film solar cells; Thin films; Atmospheric plasmas; Barrier layers; CIGS thin films; Gallium selenides; MoSe2; Selenium compounds
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Taylor and Francis Ltd.
2023
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my.uniten.dspace-236962023-05-29T14:51:04Z Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell Ong K.H. Ramasamy A. Arnou P. Maniscalco B. W. Bowers J. Chandan Kumar C. Bte Marsadek M. 57203145595 16023154400 56429479000 54793233900 7402759893 6701755282 26423183000 Copper compounds; Efficiency; Gallium compounds; Layered semiconductors; Molybdenum oxide; Plasma jets; Solar cells; Thin film solar cells; Thin films; Atmospheric plasmas; Barrier layers; CIGS thin films; Gallium selenides; MoSe2; Selenium compounds As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2 can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In this paper, a new method is proposed to form a Molybdenum Oxide (MoOx) barrier layer in between of the Mo back contact using plasma jet under atmospheric based conditions. The effect of MoOx compound (MoO2 and MoO3) towards the efficiency of the device is investigated. It has been proven that a thin layer of MoOx barrier layer is able to control the formation of MoSe2 effectively and provide a significant improvement in electrical properties of the devices. A power conversion efficiency of 5.24% with least efficiency variation across the champion device was achieved which demonstrates the importance of this methodology on small area devices. � 2018, � 2018 Informa UK Limited, trading as Taylor & Francis Group. Final 2023-05-29T06:51:04Z 2023-05-29T06:51:04Z 2018 Article 10.1080/10667857.2018.1502512 2-s2.0-85050654828 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85050654828&doi=10.1080%2f10667857.2018.1502512&partnerID=40&md5=e3e4e8ab98ab9a82817ee7a1c7380b18 https://irepository.uniten.edu.my/handle/123456789/23696 33 11 723 729 All Open Access, Green Taylor and Francis Ltd. Scopus |
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Copper compounds; Efficiency; Gallium compounds; Layered semiconductors; Molybdenum oxide; Plasma jets; Solar cells; Thin film solar cells; Thin films; Atmospheric plasmas; Barrier layers; CIGS thin films; Gallium selenides; MoSe2; Selenium compounds |
| author2 |
57203145595 |
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57203145595 Ong K.H. Ramasamy A. Arnou P. Maniscalco B. W. Bowers J. Chandan Kumar C. Bte Marsadek M. |
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Article |
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Ong K.H. Ramasamy A. Arnou P. Maniscalco B. W. Bowers J. Chandan Kumar C. Bte Marsadek M. |
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Ong K.H. Ramasamy A. Arnou P. Maniscalco B. W. Bowers J. Chandan Kumar C. Bte Marsadek M. Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell |
| author_sort |
Ong K.H. |
| title |
Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell |
| title_short |
Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell |
| title_full |
Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell |
| title_fullStr |
Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell |
| title_full_unstemmed |
Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell |
| title_sort |
formation of moox barrier layer under atmospheric based condition to control mose2 formation in cigs thin film solar cell |
| publisher |
Taylor and Francis Ltd. |
| publishDate |
2023 |
| _version_ |
1806426024091582464 |
| score |
13.214268 |