Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coeff...
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-236612023-05-29T14:50:50Z Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software Harif M.N. Abdullah S.F. Mahmood Zuhdi A.W. Za'Abar F. Bahrudin M.S. Hasani A.H. 22634024000 14319069500 56589966300 57204593023 55603412800 57204586055 C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coefficient; Temperature The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25�C to 50�C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change. � 2018 IEEE. Final 2023-05-29T06:50:50Z 2023-05-29T06:50:50Z 2018 Conference Paper 10.1109/SMELEC.2018.8481333 2-s2.0-85056261541 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056261541&doi=10.1109%2fSMELEC.2018.8481333&partnerID=40&md5=dcfd5dc861af78f3edecde65cb40bd94 https://irepository.uniten.edu.my/handle/123456789/23661 2018-August 8481333 201 204 Institute of Electrical and Electronics Engineers Inc. Scopus |
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C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coefficient; Temperature |
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22634024000 Harif M.N. Abdullah S.F. Mahmood Zuhdi A.W. Za'Abar F. Bahrudin M.S. Hasani A.H. |
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Conference Paper |
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Harif M.N. Abdullah S.F. Mahmood Zuhdi A.W. Za'Abar F. Bahrudin M.S. Hasani A.H. |
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Harif M.N. Abdullah S.F. Mahmood Zuhdi A.W. Za'Abar F. Bahrudin M.S. Hasani A.H. Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software |
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Harif M.N. |
title |
Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software |
title_short |
Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software |
title_full |
Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software |
title_fullStr |
Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software |
title_full_unstemmed |
Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software |
title_sort |
simulation analysis on cigs solar cell on different absorber layer thickness subject to temperature change using scaps 1-d software |
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Institute of Electrical and Electronics Engineers Inc. |
publishDate |
2023 |
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1806424100852203520 |
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13.214268 |