Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

• Main Authors: Kaharudin K.E., Salehuddin F., Soin N., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
• Other Authors: 56472706900
• Format: Article
• Published: Asian Research Publishing Network 2023

The limitation of Poly-Si/ SiO2 devices in producing a greater value of drive current (ION) has become a major issue, especially for very small scale devices. It is believed that the problem may be resolved by introducing metalgate/ high-k dielectrics to replace traditional Poly-Si/SiO2 technology....