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Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Conversion efficiency; HVDC power transmission; MOSFET devices; Silicon carbide; Bidirectional isolated dc-dc converter; Conduction loss; Control circuits; Dual active bridges; Gate drives; Power-losses; SiC MOSFET; Switching loss; DC-DC converters

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Bibliographic Details
Main Authors:	Akagi H., Yamagishi T., Tan N.M.L., Miyazaki Y., Kinouchi S.-I., Koyama M.
Other Authors:	7102912290
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2023
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