Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films

In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and...

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Main Authors: Jamal, M.S., Shahahmadi, S.A., Chelvanathan, P., Alharbi, H.F., Karim, M.R., Ahmad Dar, M., Luqman, M., Alharthi, N.H., Al-Harthi, Y.S., Aminuzzaman, M., Asim, N., Sopian, K., Tiong, S.K., Amin, N., Akhtaruzzaman, M.
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Language:English
Published: 2020
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spelling my.uniten.dspace-128752020-07-07T06:16:38Z Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films Jamal, M.S. Shahahmadi, S.A. Chelvanathan, P. Alharbi, H.F. Karim, M.R. Ahmad Dar, M. Luqman, M. Alharthi, N.H. Al-Harthi, Y.S. Aminuzzaman, M. Asim, N. Sopian, K. Tiong, S.K. Amin, N. Akhtaruzzaman, M. In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 °C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 Ω cm to 72 Ω cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices. © 2019 The Authors 2020-02-03T03:27:29Z 2020-02-03T03:27:29Z 2019 Article 10.1016/j.rinp.2019.102360 en
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description In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 °C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 °C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 Ω cm to 72 Ω cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices. © 2019 The Authors
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author Jamal, M.S.
Shahahmadi, S.A.
Chelvanathan, P.
Alharbi, H.F.
Karim, M.R.
Ahmad Dar, M.
Luqman, M.
Alharthi, N.H.
Al-Harthi, Y.S.
Aminuzzaman, M.
Asim, N.
Sopian, K.
Tiong, S.K.
Amin, N.
Akhtaruzzaman, M.
spellingShingle Jamal, M.S.
Shahahmadi, S.A.
Chelvanathan, P.
Alharbi, H.F.
Karim, M.R.
Ahmad Dar, M.
Luqman, M.
Alharthi, N.H.
Al-Harthi, Y.S.
Aminuzzaman, M.
Asim, N.
Sopian, K.
Tiong, S.K.
Amin, N.
Akhtaruzzaman, M.
Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
author_facet Jamal, M.S.
Shahahmadi, S.A.
Chelvanathan, P.
Alharbi, H.F.
Karim, M.R.
Ahmad Dar, M.
Luqman, M.
Alharthi, N.H.
Al-Harthi, Y.S.
Aminuzzaman, M.
Asim, N.
Sopian, K.
Tiong, S.K.
Amin, N.
Akhtaruzzaman, M.
author_sort Jamal, M.S.
title Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
title_short Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
title_full Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
title_fullStr Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
title_full_unstemmed Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
title_sort effects of growth temperature on the photovoltaic properties of rf sputtered undoped nio thin films
publishDate 2020
_version_ 1672614185821798400
score 13.214268