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Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering

In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size...

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Main Authors: Sapeli, M.M.I., Ferdaous, M.T., Shahahmadi, S.A., Sopian, K., Chelvanathan, P., Amin, N.
Format: Article
Language:English
Published: 2018
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spelling my.uniten.dspace-104202018-11-09T02:05:23Z Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering Sapeli, M.M.I. Ferdaous, M.T. Shahahmadi, S.A. Sopian, K. Chelvanathan, P. Amin, N. In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 µm was observed for the doped sample. Bandgap was found to vary (1.51–1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20–0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. © 2018 2018-11-07T08:10:48Z 2018-11-07T08:10:48Z 2018 Article 10.1016/j.matlet.2018.03.056 en
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language English
description In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 µm was observed for the doped sample. Bandgap was found to vary (1.51–1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20–0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. © 2018
format Article
author Sapeli, M.M.I.
Ferdaous, M.T.
Shahahmadi, S.A.
Sopian, K.
Chelvanathan, P.
Amin, N.
spellingShingle Sapeli, M.M.I.
Ferdaous, M.T.
Shahahmadi, S.A.
Sopian, K.
Chelvanathan, P.
Amin, N.
Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
author_facet Sapeli, M.M.I.
Ferdaous, M.T.
Shahahmadi, S.A.
Sopian, K.
Chelvanathan, P.
Amin, N.
author_sort Sapeli, M.M.I.
title Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
title_short Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
title_full Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
title_fullStr Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
title_full_unstemmed Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering
title_sort effects of cr doping in the structural and optoelectronic properties of cu2znsns4 (czts) thin film by magnetron co-sputtering
publishDate 2018
_version_ 1644494968825315328
score 13.160551

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