Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique

• Main Authors: C. G., Ching, S. S., Ng, Z., Hassan, H., Abu Hassan
• Other Authors: [e-mail]
• Format: Working Paper
• Language: English
• Published: Universiti Malaysia Perlis 2010
• Subjects: X-ray diffraction (XRD); GaN; 6H-SiC; Mismatch; Silicon carbide (SiC); International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/9066

International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.