Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding
MUCEET 2009 is organized by Malaysian Technical Universities Network (MTUN) comprising of Universiti Malaysia Perlis (UniMAP), Universiti Tun Hussein Onn (UTHM), Universiti Teknikal Melaka (UTeM) and Universiti Malaysia Pahang (UMP), 20th - 22nd June 2009 at M. S. Garden Hotel, Kuantan, Pahang.
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Universiti Malaysia Pahang (UMP)
2010
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my.unimap-88512010-08-19T05:08:09Z Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding Norainon, Mohamed Muhamad Zahim, Sujod Silicon carbide (SiC) GTO thyristor Turn-off time Poisson’s equation MATLAB/Simulink Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 MUCEET 2009 is organized by Malaysian Technical Universities Network (MTUN) comprising of Universiti Malaysia Perlis (UniMAP), Universiti Tun Hussein Onn (UTHM), Universiti Teknikal Melaka (UTeM) and Universiti Malaysia Pahang (UMP), 20th - 22nd June 2009 at M. S. Garden Hotel, Kuantan, Pahang. SiC GTO thyristor complimented by the material advantages of SiC has better characteristics than its Si GTO thyristor counterpart. The high-voltage operation of SiC is evaluated for use in inductively loaded switching circuits. Compared to purely resistively elements, inductive loads subject the switching device ti higher internal power dissipation. This paper presented two dimensional the fast-switching behavior of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding. The turn-on and turn-off characteristics of the 4H-SiC GTO thyristor compared to common Si GTO thyristor are discussed. 2010-08-19T05:08:09Z 2010-08-19T05:08:09Z 2009-06-20 Working Paper p.538-543 http://hdl.handle.net/123456789/8851 en Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 Universiti Malaysia Pahang (UMP) |
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Silicon carbide (SiC) GTO thyristor Turn-off time Poisson’s equation MATLAB/Simulink Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 |
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Silicon carbide (SiC) GTO thyristor Turn-off time Poisson’s equation MATLAB/Simulink Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 Norainon, Mohamed Muhamad Zahim, Sujod Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding |
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MUCEET 2009 is organized by Malaysian Technical Universities Network (MTUN) comprising of Universiti Malaysia Perlis (UniMAP), Universiti Tun Hussein Onn (UTHM), Universiti Teknikal Melaka (UTeM) and Universiti Malaysia Pahang (UMP), 20th - 22nd June 2009 at M. S. Garden Hotel, Kuantan, Pahang. |
format |
Working Paper |
author |
Norainon, Mohamed Muhamad Zahim, Sujod |
author_facet |
Norainon, Mohamed Muhamad Zahim, Sujod |
author_sort |
Norainon, Mohamed |
title |
Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding |
title_short |
Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding |
title_full |
Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding |
title_fullStr |
Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding |
title_full_unstemmed |
Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding |
title_sort |
fast-switching of 4h-sic gto thyristor under inductive load in matlab/simulink surrounding |
publisher |
Universiti Malaysia Pahang (UMP) |
publishDate |
2010 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/8851 |
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1643789338828341248 |
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13.214268 |