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Pressure effect on Si quantum-dot potential

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Main Authors: Yarub K. A., Al-Douri, Uda, Hashim, Prof. Dr., Ahmed, N. M., Zaliman, Sauli, Prof. Madya
Format: Working Paper
Language:English
Published: American Institute of Physics 2010
Subjects:
Elemental semiconductor
Pressure effect
Quantum-dot
International Conference on Nanoscience and Nanotechnology
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/8501
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spelling my.unimap-85012010-08-06T07:23:29Z Pressure effect on Si quantum-dot potential Yarub K. A., Al-Douri Uda, Hashim, Prof. Dr. Ahmed, N. M. Zaliman, Sauli, Prof. Madya Elemental semiconductor Pressure effect Quantum-dot International Conference on Nanoscience and Nanotechnology Link to publisher's homepage at http://scitation.aip.org/ Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies. 2010-08-06T07:23:29Z 2010-08-06T07:23:29Z 2009-06-01 Working Paper Vol. 1136 (1), 2009, p. 11-15 978-0-7354-0673-5 0094-243X http://link.aip.org/link/?APCPCS/1136/11/1 http://hdl.handle.net/123456789/8501 en Proceedings of the International Conference on Nanoscience and Nanotechnology 2009 American Institute of Physics
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Elemental semiconductor
Pressure effect
Quantum-dot
International Conference on Nanoscience and Nanotechnology
spellingShingle Elemental semiconductor
Pressure effect
Quantum-dot
International Conference on Nanoscience and Nanotechnology
Yarub K. A., Al-Douri
Uda, Hashim, Prof. Dr.
Ahmed, N. M.
Zaliman, Sauli, Prof. Madya
Pressure effect on Si quantum-dot potential
description Link to publisher's homepage at http://scitation.aip.org/
format Working Paper
author Yarub K. A., Al-Douri
Uda, Hashim, Prof. Dr.
Ahmed, N. M.
Zaliman, Sauli, Prof. Madya
author_facet Yarub K. A., Al-Douri
Uda, Hashim, Prof. Dr.
Ahmed, N. M.
Zaliman, Sauli, Prof. Madya
author_sort Yarub K. A., Al-Douri
title Pressure effect on Si quantum-dot potential
title_short Pressure effect on Si quantum-dot potential
title_full Pressure effect on Si quantum-dot potential
title_fullStr Pressure effect on Si quantum-dot potential
title_full_unstemmed Pressure effect on Si quantum-dot potential
title_sort pressure effect on si quantum-dot potential
publisher American Institute of Physics
publishDate 2010
url http://dspace.unimap.edu.my/xmlui/handle/123456789/8501
_version_ 1643789194985734144
score 13.222552

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