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Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE

Master of Science in Nanoelectronic Engineering

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Bibliographic Details
Main Author: Cheh, Chai Mee
Other Authors: Mohd Khairuddin, Md. Arshad, Ir. Dr.
Format: Thesis
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2016
Subjects:
Power rectifier
Power Rectifier (P-i-N rectifier)
Diode
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78205
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spelling my.unimap-782052023-03-23T04:03:39Z Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE Cheh, Chai Mee Mohd Khairuddin, Md. Arshad, Ir. Dr. Power rectifier Power Rectifier (P-i-N rectifier) Diode Master of Science in Nanoelectronic Engineering Restricted Item The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust and competitive in the market is boundless, which aims for continuous improvement on the electrical characteristics. In general, the P-i-N rectifier is consists of a highly-doped P-N junction with a low doped intrinsic region sandwiched in between the regions. Such characteristics have made the design of as high as 1000 V reverse voltage diode is possible by lowering the switching time. This thesis describes the research work done on the power rectifier by exploring the device characteristics and optimizing the input responses using Design of Experiment (DOE) techinique. Parameter such as epitaxial layer specification, junction drive time and also other internal fabrication processes were optimized, to produce a desired device robustness and yield improvement. The main electrical characteristics namely reverse recovery lifetime, reverse voltage, reverse leakage current and such, were investigated and analyzed. The results show that with implementation of optimized epitaxial thickness and resistivity, the P-i-N power diodes were able to withstand high reverse voltage. The optimum epitaxial thickness for 600 V device is at 96 μm. The epitaxial thickness is a dominant factor as compared to epitaxial resistivity and boron diffusion time. Next, the variation in junction drive time shows a direct relationship between the junction depth of the P-i-N rectifier to the reverse voltage for 200 V device. Each additional 60 minutes in boron diffusion time will increase the device reverse voltage by 30 V. Lastly, the investigations are about reverse recovery lifetime and forward voltage of the power diode. 2016 2023-03-23T03:56:17Z 2023-03-23T03:56:17Z Thesis http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78205 en Universiti Malaysia Perlis (UniMAP) Universiti Malaysia Perlis (UniMAP) Institute of Nano Electronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Power rectifier
Power Rectifier (P-i-N rectifier)
Diode
spellingShingle Power rectifier
Power Rectifier (P-i-N rectifier)
Diode
Cheh, Chai Mee
Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
description Master of Science in Nanoelectronic Engineering
author2 Mohd Khairuddin, Md. Arshad, Ir. Dr.
author_facet Mohd Khairuddin, Md. Arshad, Ir. Dr.
Cheh, Chai Mee
format Thesis
author Cheh, Chai Mee
author_sort Cheh, Chai Mee
title Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_short Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_full Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_fullStr Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_full_unstemmed Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
title_sort optimization of p-i-n rectifier diode for yield and robustness improvement using doe
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78205
_version_ 1772813068489719808
score 13.214268

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