Cover Image

Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET

Master of Science in Microelectronic Systems Design Engineering

Saved in:
Bibliographic Details
Main Author: Faradilla, Aziz
Other Authors: Norhawati, Ahmad, Dr.
Format: Dissertation
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2017
Subjects:
Metal oxide semiconductors, Complementary
Transistors
Amplifier
Amplifier > Design and constuction
Floating-gate MOSFET (FGMOS)
Floating-gate Metal-Oxide-Semiconductor (MOS)
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77867
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-77867
record_format dspace
spelling my.unimap-778672023-02-16T09:38:49Z Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET Faradilla, Aziz Norhawati, Ahmad, Dr. Metal oxide semiconductors, Complementary Transistors Amplifier Amplifier -- Design and constuction Floating-gate MOSFET (FGMOS) Floating-gate Metal-Oxide-Semiconductor (MOS) Master of Science in Microelectronic Systems Design Engineering Low voltage, low power dissipation, high gain and matching are some of the concern when designing an analog circuit. A very low voltage can increase battery lifetime and integration density as market demands. Floating-gate Metal-Oxide-Semiconductor (MOS) also known as FGMOS is a new technology design that has been introduced as an element in low voltage circuit design in CMOS technology. FGMOS technique has been reported as low voltage and low power design application for increasing the battery lifetime due to its lower threshold voltage. The operational time of the FGMOS transistor can be improved by controlling the threshold voltage without reducing the feature size of the transistor. This research focuses on analyzing and comparing the simulation application of FGMOS technique with conventional MOSFET for various circuit designs. Capacitor ratio of 0.5 with value of 2 fF of the FGMOS transistor is chosen in order to have most stable output result. Proposed FGMOS operational amplifier circuit consists of two stages namely input differential circuit and output buffer stage that contributes in amplifying an input signal. The circuit simulations are analyzed using Full Custom Synopsys software with 90 nm CMOS technology. The simulated results show approximately 42 dB of gain with 3dBbandwidth of 233 kHz, unity gain bandwidth of 23.6 MHz and total power dissipation of 203.3520 mW. In conclusion, the proposed FGMOS designs show comparable result with conventional MOSFET designs. However, the proposed design performance can be improved in further research due to its lower threshold voltage. 2017 2023-02-16T09:36:13Z 2023-02-16T09:36:13Z Dissertation http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77867 en Universiti Malaysia Perlis (UniMAP) Universiti Malaysia Perlis (UniMAP) School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Metal oxide semiconductors, Complementary
Transistors
Amplifier
Amplifier -- Design and constuction
Floating-gate MOSFET (FGMOS)
Floating-gate Metal-Oxide-Semiconductor (MOS)
spellingShingle Metal oxide semiconductors, Complementary
Transistors
Amplifier
Amplifier -- Design and constuction
Floating-gate MOSFET (FGMOS)
Floating-gate Metal-Oxide-Semiconductor (MOS)
Faradilla, Aziz
Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET
description Master of Science in Microelectronic Systems Design Engineering
author2 Norhawati, Ahmad, Dr.
author_facet Norhawati, Ahmad, Dr.
Faradilla, Aziz
format Dissertation
author Faradilla, Aziz
author_sort Faradilla, Aziz
title Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET
title_short Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET
title_full Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET
title_fullStr Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET
title_full_unstemmed Design and analysis of 90 nm two-stage operational amplifier using floating-gate MOSFET
title_sort design and analysis of 90 nm two-stage operational amplifier using floating-gate mosfet
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2017
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77867
_version_ 1772813064110866432
score 13.160551

Similar Items