Cover Image

Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique

Link to publisher's homepage at http://ijneam.unimap.edu.my/

Saved in:
Bibliographic Details
Main Authors: Azhari, A. W., Eop, T. S., Che Halin, D. S., Sopian, K., Hashim, U., Zaidi, S. H.
Other Authors: ayuwazira@unimap.edu.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
Polycrystalline
Silicon germanium
Thin film
Silicon nanostructures
Photovoltaic
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-77147
record_format dspace
spelling my.unimap-771472022-11-23T03:44:53Z Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique Azhari, A. W. Azhari, A. W. Eop, T. S. Che Halin, D. S. Sopian, K. Hashim, U. Zaidi, S. H. ayuwazira@unimap.edu.my Faculty of Civil Engineering Technology, Universiti Malaysia Perlis (UniMAP) Centre of Excellence, Water Research and Environmental Sustainability Growth, (WAREG), Universiti Malaysia Perlis (UniMAP) Center of Excellence, Geopolymer and Green Technology (CEGeoGTech), Universiti Malaysia Perlis (UniMAP) Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM) Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP) Gratings Incorporated Albuquerque, USA Polycrystalline Silicon germanium Thin film Silicon nanostructures Photovoltaic Link to publisher's homepage at http://ijneam.unimap.edu.my/ Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resultin – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261. 2022 2022-11-23T03:44:53Z 2022-11-23T03:44:53Z 2022-10 Article International Journal of Nanoelectronics and Materials, vol.15 (4), 2022, pages 303-318 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Polycrystalline
Silicon germanium
Thin film
Silicon nanostructures
Photovoltaic
spellingShingle Polycrystalline
Silicon germanium
Thin film
Silicon nanostructures
Photovoltaic
Azhari, A. W.
Azhari, A. W.
Eop, T. S.
Che Halin, D. S.
Sopian, K.
Hashim, U.
Zaidi, S. H.
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 ayuwazira@unimap.edu.my
author_facet ayuwazira@unimap.edu.my
Azhari, A. W.
Azhari, A. W.
Eop, T. S.
Che Halin, D. S.
Sopian, K.
Hashim, U.
Zaidi, S. H.
format Article
author Azhari, A. W.
Azhari, A. W.
Eop, T. S.
Che Halin, D. S.
Sopian, K.
Hashim, U.
Zaidi, S. H.
author_sort Azhari, A. W.
title Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
title_short Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
title_full Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
title_fullStr Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
title_full_unstemmed Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
title_sort annealing effects on polycrystalline silicon germanium (sige) thin films grown on nanostructured silicon substrates using thermal evaporation technique
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147
_version_ 1753972988462497792
score 13.222552

Similar Items